Single-substrate-heat-processing apparatus and method for performing reformation and crystallization

A film forming system for forming a crystallized thin film on a target substrate, said thin film being formed of a material selected from the group consisting of metal oxides, metal nitrides and metals, said system comprising:

• an airtight common transfer chamber;
• a transfer mechanism arranged within said common transfer chamber configured to transfer said target substrate;
• a single-substrate-processing CVD apparatus connected to said common transfer chamber via a gate valve, configured to deposit an amorphous thin film by CVD on said target substrate;
• and
• a single-substrate-heat-processing apparatus connected to said common transfer chamber configured to perform a reforming process for removing organic impurities contained in said thin film and a crystallizing process for crystallizing said thin film, said heat-processing apparatus including,
• an airtight process chamber,
• a work table arranged within said process chamber configured to place said target substrate thereon,
• an exhaust mechanism configured to exhaust said process chamber,
• a supply mechanism configured to supply a process gas containing oxygen atoms into said process chamber,
• a heating mechanism configured to heat said thin film while said target substrate is placed on said work table, and
• a control section configured to serve to control said heating mechanism such that said thin film is heated to a first temperature lower than said crystallizing temperature of said material over a first period and, then, said thin film is heated to a second temperature higher than said crystallizing temperature, followed by cooling said thin film to a temperature lower than said crystallizing temperature, said first period being longer than a second period during which said thin film has a temperature higher than said crystallizing temperature.

A method of forming a thin film on a target substrate, said thin film being formed of a material selected from the group consisting of metal oxides, metal nitrides and metals, said method comprising:

• depositing a thin film in an amorphous state by CVD on said target substrate;
• placing said target substrate having said thin film deposited thereon on a work table arranged within an airtight process chamber;
• performing a reforming process for removing organic impurities from said thin film by supplying a process gas containing oxygen atoms into said process chamber and heating over a first period said thin film formed on said target substrate placed on said work table to a first temperature lower than a crystallizing temperature of said material while exhausting said process chamber;
• and
• performing a crystallizing process for crystallizing said thin film after said reforming process by heating said thin film formed on said target substrate placed on said work table to a second temperature higher than said crystallizing temperature, followed by cooling said thin film to a temperature lower than said crystallizing temperature, said first period being longer than a second period during which said thin film has a temperature higher than said crystallizing temperature.

A method of forming a thin film on a target substrate, said thin film including a first layer and a second layer formed of a material selected from the group consisting of metal oxides, metal nitrides and metals, said method comprising:

• depositing a first layer in an amorphous state by CVD on said target substrate;
• performing a reforming process for removing organic impurities contained in said first layer by heating said first layer to a temperature lower than a crystallizing temperature of said material within an atmosphere containing active oxygen atoms;
• depositing a second layer in an amorphous state by CVD on said first layer having being reformed;
• placing said target substrate having said second layer deposited thereon on a work table arranged within an airtight process chamber;
• performing a reforming process for removing organic impurities contained in said second layer by supplying a process gas containing oxygen atoms into said process chamber and by heating over a first period said second layer deposited on said target substrate placed on said work table to a first temperature lower than said crystallizing temperature;
• and
• performing a crystallizing process for crystallizing said first and second layers after said reforming process of said second layer by heating said first and second layers deposited on said target substrate placed on said work table to a second temperature higher than said crystallizing temperature, followed by cooling said first and second layers to a temperature lower than said crystallizing temperature, said first period being longer than a second period during which said first and second layers have a temperature higher than said crystallizing temperature.