Method for fabricating semiconductor device by using etching polymer
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsWon Soung Park, Phil Goo Kong, Ho Seok Lee, Dong Duk Lee
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Abstract
The present invention discloses a method for fabricating a semiconductor device using an etch-resistant polymer. The method includes a step for the in-situ generation of a polymer layer on the exposed surfaces of a photoresist film pattern, a pad oxide film, and a hard mask layer. This polymer acts as a protective film and prevents photoresist erosion during trench etching processes and improves the etch selectivity. As a result, trench structures can be formed more easily and with improved dimensional control.
Claims10
A method for fabricating a semiconductor device using an etching polymer, comprising the steps of:
- forming an insulating film having a stacked structure comprising a pad oxide film and a hard mask layer on a semiconductor substrate;
- forming a photoresist film pattern on the insulating film, the photoresist pattern exposing a predetermined device isolation region on the insulating film;
- etching the insulating film using the photoresist film pattern as a mask to form an insulating film pattern, the insulating film pattern exposing predetermined regions of the semiconductor substrate;
- forming a polymer layer on the exposed surfaces of the photoresist film pattern and the insulating film pattern;
- etching the exposed regions of the semiconductor substrate to open a trench for device isolation in the semiconductor substrate;
- and
- filling the trench with a device isolation film.
A method for fabricating a semiconductor device using an etching polymer, comprising the steps of:
- forming an insulating film on a semiconductor substrate;
- forming a photoresist film pattern on the insulating film, the photoresist pattern exposing predetermined regions on the insulating film;
- etching the insulating film using the photoresist film pattern as a mask to remove predetermined regions of the insulating film and expose the underlying regions of the semiconductor substrate;
- forming a polymer layer on the exposed surfaces of the photoresist film pattern and the insulating film;
- and
- etching the exposed regions of the semiconductor substrate.
Dependencies are inferred from the claim text.