Capacitor for semiconductor device and method for manufacturing the same

A semiconductor device having a capacitor formed therein, comprising:

• a substrate having impurity regions formed therein;
• an insulating layer disposed on said substrate;
• a buried layer disposed in a storage node area defined by at least said insulating layer, wherein said buried layer is in contact with at least one of said impurity regions;
• a bottom layer formed on said buried layer and extending beyond said buried layer;
• a first cylindrical electrode having first walls upwardly extending from said bottom layer;
• second cylindrical electrodes having second walls upwardly extending from said bottom layer and disposed on outer sides of said first cylindrical electrode;
• a dielectric layer disposed on said first cylindrical electrode and said second cylindrical electrodes;
• and
• an upper electrode disposed on said dielectric layer.

A method for manufacturing a capacitor, comprising the steps of:

• forming a hole in an insulating layer formed on a substrate to expose an impurity region;
• forming a first conductive layer on said insulating layer;
• forming a plurality of insulation blocks on said first conductive layer, by pattering a reverse-toned negative photoresist layer on said insulating layer using a word line mask and selectively removing only said insulating layer using said reverse-toned negative photoresist layer;
• selectively removing portions of selected said insulation blocks and said first conductive layer to form at least one first conductive portion with at least one of said plurality of insulation blocks remaining on said first conductive portion;
• forming a second conductive layer at least over said first conductive layer;
• anisotropically removing portions of said second conductive layer;
• removing the remaining said insulation blocks;
• forming a dielectric layer on said second conductive layer;
• and
• forming a third conductive layer on said dielectric layer.