Method of fabricating thin film transistor
AssigneeLG. Philips LCD Co., Ltd.
InventorsSeung-Ki Joo, Tae-Kyung Kim
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Abstract
The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.
Claims10
A method of fabricating thin film transistor comprising the steps of:
- forming a semiconductor layer on a substrate, said semiconductor layer having a first region, a channel region and a second region in order;
- forming a gate insulating layer/a gate electrode on said channel region;
- doping said first and said second region heavily with impurity;
- forming a metal film pattern making said first region a metal-offset;
- and
- crystallizing said semiconductor layer by means of applying thermal treatment to said semiconductor layer having said metal film.
A method of fabricating thin film transistor comprising the steps of:
- forming a semiconductor layer on a substrate, said semiconductor layer having a first region, a channel region and a second region in order;
- forming a gate insulating layer/a gate electrode on said channel region;
- forming a metal film pattern to make said first region become a metal-offset;
- doping said first and said second region heavily with impurity;
- and
- crystallizing said semiconductor layer by means of applying thermal treatment to said semiconductor layer having said metal film.
Dependencies are inferred from the claim text.