Laser annealing method and laser annealing device
AssigneeSemiconductor Energy Laboratory Co., Ltd., a Japanese corporation
InventorsNaoto Kusumoto, Shunpei Yamazaki, Koichiro Tanaka
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Abstract
In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.
Claims34
A method of performing laser annealing by irradiating a laser beam to a non single crystal semiconductor film:
- wherein the laser beam is irradiated while forming a temperature holding layer of heat of a gas or a liquid on a side of a face irradiated with the laser beam.
A method of performing laser annealing by irradiating a laser beam to a non single crystal semiconductor film:
- wherein the laser beam is irradiated in a state where oxygen and hydrogen are distributed at least at a vicinity of an inside and an outside of a surface of the semiconductor film and oxygen and hydrogen are made to react with each other by the laser beam by which water is formed simultaneously with crystallizing the semiconductor film.
A method of performing laser annealing by irradiating a laser beam fabricated in a linear shape to a non single crystal semiconductor film:
- wherein the laser beam is irradiated while forming a temperature holding layer of heat of a gas or a liquid on a side of a face irradiated with the laser beam.
A method of performing laser annealing by irradiating a laser beam fabricated in a linear shape to a non single crystal semiconductor film:
- wherein the laser beam is irradiated in a state where oxygen and hydrogen are distributed at least at a vicinity of an inside and an outside of a surface of the semiconductor film by which oxygen and hydrogen are made to react with each other by the laser beam whereby water is formed simultaneously with crystallizing the semiconductor film.
A method of performing laser annealing by irradiating a laser beam to a non single crystal semiconductor film:
- wherein an inside of a laser irradiation chamber capable of controlling an atmosphere thereof is brought into an atmosphere including at least water molecules and the laser beam is irradiated to the non single crystal semiconductor film in the laser irradiation chamber.
A method of performing laser annealing by irradiating a laser beam to a non single crystal semiconductor film;
- wherein the laser beam is irradiated to the non single crystal semiconductor film in a laser irradiation chamber in a state where an inside of the laser irradiation chamber capable of controlling an atmosphere thereof is brought into an atmosphere including at least oxygen and hydrogen by which oxygen and hydrogen are made to react with each other by the laser beam and water is formed simultaneously with crystallizing the semiconductor film.
A method of performing laser annealing by irradiating a laser beam to a non single crystal semiconductor film:
- wherein the laser beam is irradiated to the non single crystal semiconductor film while forming a layer constituted by water molecules in a range from a surface of the non single crystal semiconductor film to just vicinities of the surface.
A method of performing laser annealing by irradiating a laser beam to a non single crystal semiconductor film:
- wherein the laser beam is irradiated to the non single crystal semiconductor film in a state where a layer constituted by water molecules is formed in a range of from a surface of the non single crystal semiconductor film to just vicinities of the surface.
A method of performing laser annealing by irradiating a laser beam to a non single crystal semiconductor film:
- wherein the laser beam is irradiated to the non single crystal semiconductor film while blowing a gas including water molecules to the non single crystal semiconductor film.
A method of performing laser annealing by irradiating laser beam to a non single crystal semiconductor film:
- wherein the laser beam is irradiated to the non single crystal semiconductor film while blowing a gas including oxygen and hydrogen to the non single crystal semiconductor film.
A method of performing laser annealing by irradiating a laser beam which is fabricated in a linear shape to a non single crystal semiconductor film:
- wherein a gas flow in an air knife shape is formed by a gas including water molecules and while blowing the gas flow in the air knife shape to the non single crystal semiconductor film, the laser beam is irradiated to a portion of the non single crystal semiconductor film to which the gas flow in the air knife shape is blown.
A method of performing laser annealing by irradiating a laser beam which is fabricated in a linear shape to a non single crystal semiconductor film:
- wherein a gas flow in an air knife shape is formed by a gas including oxygen and hydrogen and while blowing the gas flow in the air knife shape to the non single crystal semiconductor film, the laser beam is irradiated to a portion of the non single crystal semiconductor film to which the gas flow in the air knife shape is blown.
Dependencies are inferred from the claim text.