US 2001/0018227 A1 · Process for producing a semiconductor device

Abstract

A semiconductor device includes an electrically conductive III-V doped semiconductor substrate of a first conduction type, a photodiode array having photodiode structures disposed on the III-V doped semiconductor substrate, a first III-V doped semiconductor layer of a second conduction type disposed between the photodiode structures and the III-V doped semiconductor substrate, etching trenches disposed on the III-V doped semiconductor substrate, each of the trenches having inner sides, the inner sides having an insulation layer and a metallization layer for electrically connecting the photodiode structures in series, the metallization layer disposed on the insulation layer; and partition lines separating each of the photodiode structures from others of the photodiode structures for producing an individual photodiode structure when the array is cut through the first III-V doped semiconductor layer along the partition lines.

Claims18

Dependent claims

A process for producing a semiconductor device, which comprises:

a) producing a doped III-V semiconductor substrate of a first conduction type;
b) applying a first doped III-V semiconductor layer of a second conduction type to the III-V semiconductor substrate;
c) applying a second doped III-V semiconductor layer of the first conduction type to the first doped III-V semiconductor layer;
d) applying an active layer system to the second doped III-V semiconductor layer;
and
e) producing at least two functional semiconductor structures electrically insulated from one another, by cutting the active layer system inclusive of the first doped III-V semiconductor layer and the second doped III-V semiconductor layer.

3 more elements

Dependencies are inferred from the claim text.

Process for producing a semiconductor device

Life of this patent

Process for producing a semiconductor device

Life of this patent

Abstract

Claims18