Process for producing GaN related compound semiconductor
AssigneeToyoda Gosei Co., Ltd.
InventorsToshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Yasuo Koide, Jun Ito
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Abstract
A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
Claims32
A GaN related compound semiconductor light-emitting device comprising:
- a p-type GaN related compound semiconductor layer;
- and
- an electrode fixed on said p-type GaN related compound semiconductor layer and having a light transmission property and an ohmic property, said electrode comprising a metal layer formed by at least one member selected from the group consisting of cobalt alloy, palladium, and palladium alloy .
A process for producing a GaN related compound semiconductor light-emitting device, comprising the steps of:
- preparing a p-type GaN related compound semiconductor layer;
- forming a metal layer using one member selected from the group consisting of cobalt alloy, palladium, and palladium alloy on the p-type GaN related compound semiconductor layer;
- and
- conducting a heat treatment for the metal layer at a temperature of from 400 to 700° C. so as to form an electrode.
A process for producing a GaN related compound semiconductor light-emitting device, comprising the steps of:
- preparing a p-type GaN related compound semiconductor layer;
- forming a metal layer using one member selected from the group consisting of cobalt alloy, palladium, and palladium alloy on the p-type GaN related compound semiconductor layer;
- and
- conducting a heat treatment for the metal layer under low-vacuum condition so as to form an electrode.
A process for producing a p-type GaN related compound semiconductor, comprising the steps of:
- doping a GaN related compound semiconductor with a p-type impurity;
- and
- subjecting the GaN related compound semiconductor to a heat treatment in a gas comprising at least oxygen.
A process for producing a GaN related compound semiconductor device comprising the steps of:
- doping a GaN related compound semiconductor layer with a p-type impurity;
- forming an electrode on the GaN related compound semiconductor layer;
- and
- subjecting the GaN related compound semiconductor layer having the electrode formed thereon to a heat treatment in a gas comprising at least oxygen.
A process for producing a GaN related compound semiconductor device comprising the steps of:
- doping a first GaN related compound semiconductor layer with a p-type impurity;
- doping a second GaN related compound semiconductor layer with an n-type impurity;
- forming a first electrode on the first GaN related compound semiconductor layer;
- forming a second electrode on the second GaN related compound semiconductor layer;
- and
- subjecting a resultant structure including the first and second GaN related compound semiconductor layers and the first and second electrodes to a heat treatment in a gas comprising at least oxygen.
A GaN related compound semiconductor device comprising:
- a p-type GaN related compound semiconductor;
- a current-diffusing electrode having a light transmission property, said current-diffusing electrode being formed on said p-type GaN related compound semiconductor;
- and
- an electrode pad which contains at least one metal reactive with nitrogen, said electrode pad being formed on said current-diffusing electrode;
- wherein a high-resistivity region is formed on a part of the p-type GaN related compound semiconductor which is located under the electrode pad by an alloying treatment according to a reaction of the metal with the p-type GaN related compound semiconductor.
Dependencies are inferred from the claim text.