Method of inspecting pattern and inspecting instrument
AssigneesHitachi, Ltd., Hitachi Tokyo Electronics Co., Ltd.
InventorsMari Nozoe, Hidetoshi Nishiyama, Shigeaki Hijikata, Kenji Watanabe, Koji Abe
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AssigneesHitachi, Ltd., Hitachi Tokyo Electronics Co., Ltd.
InventorsMari Nozoe, Hidetoshi Nishiyama, Shigeaki Hijikata, Kenji Watanabe, Koji Abe
Estimating the term…
There are provided an inline inspection system and inspection method for inspecting the substrate surface on which semiconductors and circuit patterns are formed by radiating thereto white beam, laser beam or electron beam, and reviewing, inspecting and discriminating the detected roughness and figure defect, particle and moreover electrical defect on the surface with higher accuracy within a short period of time with the same instrument. Thereby, automatic movement to the position to be reviewed, acquisition of image and classification can be realized. On the occasion of identifying the position to be reviewed on a sample and forming an image through irradiation of electron beam on the basis of the positional information of defect detected with the other inspection instrument, an electrical defect can be reviewed with the voltage contrast mode by designating the electron beam irradiation condition, detectors and detecting condition depending on a kind of defect to be reviewed. The image obtained is automatically classified in the image processing unit and the result is then additionally output to the defect file.
An inline pattern inspection system comprising a means for radiating the electron beam, for the scanning purpose, to the substrate surface where the predetermined pattern is formed, a detecting means for detecting the secondary signal generated from said substrate surface, a means for forming an image on a graphical user interface from said signal detected with said detecting means and a means for recognizing and discriminating the information about figure, roughness and voltage contrast of said substrate from said image.
An inline pattern inspection system comprising a means for radiating the electron beam, for the scanning purpose, to the substrate surface where the predetermined pattern is formed, a detecting means for detecting the secondary signal generated from said substrate surface, a means for forming an image on a graphical user interface from said signal detected with said detecting means and a means for recognizing and discriminating, from said image, the information about particle and defect based on the figure, roughness and voltage contrast of said substrate surface.
A method of inspecting pattern, comprising the steps of:
A method of inspecting pattern, comprising the steps of:
A method of inspecting pattern, comprising the steps of:
A method of inspecting pattern, comprising the steps of:
A method of inspecting pattern, further comprising the steps of:
An inline pattern inspection system comprising an inspection instrument for inspecting the substrate surface on which the predetermined pattern is formed with radiation of electron beam and optical beam and a review instrument for receiving the inspection result including the positional information of particle and defect on said substrate surface detected with said inspection instrument, forming an image from the signal detected with radiation of electron beam to said substrate surface and recognizing and discriminating the information about particle and defect of said substrate surface from said image.
An inline pattern inspection system comprising an inspection instrument for inspecting the wafer surface on which circuit pattern is formed by radiating thereto the electron beam, white luminescence and laser beam and a review instrument for receiving the inspection result including the positional information of particle/defect of said wafer surface detected with said inspection instrument, forming an image from the signal detected by radiating the electron beam to said wafer surface in the predetermined beam current and scanning speed and recognizing and discriminating the information of particle/defect of said wafer surface from said image.
Dependencies are inferred from the claim text.