Tunable semiconductor laser system

A tunable semiconductor laser system, comprising:

• a laser including,
• an electrically responsive substrate;
• a support block positioned on the electrically responsive substrate;
• a top reflecting member and a bottom reflecting member;
• a first cantilever structure including a base section resting on the support block, a deformable section extending above the electrically responsive substrate and creating an air gap between the deformable section and the electrically responsive substrate, and an active head positioned at a predetermined location on the deformable section and including at least a portion of the top reflecting member;
• a frequency sensor that forms an integral assembly with the laser;
• and
• a control loop coupled to the frequency sensor and the first cantilever structure, wherein in response to a detected change in frequency the control loop adjusts an electric charge applied to the substrate to provide a controlled frequency and power of an output beam.

A tunable semiconductor laser system, comprising:

• an edge emitter or VCSEL laser including a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material, and first and second reflective members positioned at opposing edges of the active and confining regions, the laser producing an output beam;
• a frequency tuning mechanism;
• a wavelength selective filter including a Fabry-Perot Etalon that provides positional dependence of a wavelength reflection or transmission of the wavelength selective filter and transmit or reflect the beam to at least first and second photodetectors;
• a fixed frequency reference filter;
• a control loop coupled to the frequency tuning mechanism, wavelength selective filter and the fixed frequency reference filter, the control loop adjusting a frequency of the output beam to a predetermined frequency is response.