High-power semiconductor laser device in which near-edge portions of active layer are removed

A semiconductor laser device comprising:

• a GaAs substrate of a first conductive type;
• a lower cladding layer of said first conductive type, formed on said GaAs substrate;
• a lower optical waveguide layer made of InGaP of an undoped type or said first conductive type, and formed on said lower cladding layer;
• an active layer made of InGaAsP or InGaAs, and formed on said lower optical waveguide layer except for near-edge areas of said lower optical waveguide layer which are adjacent to opposite end faces of said semiconductor laser device, where said opposite end faces are perpendicular to a direction of laser light which oscillates in said semiconductor laser device;
• a first upper optical waveguide layer made of InGaP of an undoped type or a second conductive type, and formed on said active layer;
• a second upper optical waveguide layer made of InGaP of an undoped type or said second conductive type, and formed over said first upper optical waveguide layer and said near-edge areas of said lower optical waveguide layer;
• an upper cladding layer of said second conductive type, formed on said second upper optical waveguide layer;
• and
• a contact layer of said second conductive type, formed on said upper cladding layer.