Semiconductor memory device
AssigneeFujitsu Limited
InventorsYoshiaki Okuyama, Yoshitaka Takahashi, Shinya Fujioka, Akihiro Funyu
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Abstract
A semiconductor memory device having a self-refresh operation includes a first circuit generating a first signal that specifies a first self-refresh cycle by a non-volatile circuit element provided in the semiconductor memory device, a second circuit receiving a second signal that specifies a second self-refresh cycle via a terminal that is used in common to another signal, and a third circuit generating a pulse signal having one of the first and second self-refresh cycles, the pulse signal being related to the self-refresh operation.
Claims13
A semiconductor memory device having a self-refresh operation comprising:
- a first circuit generating a first signal that specifies a first self-refresh cycle by a non-volatile circuit element provided in the semiconductor memory device;
- a second circuit receiving a second signal that specifies a second self-refresh cycle via a terminal that is used in common to another signal;
- and
- a third circuit generating a pulse signal having one of the first and second self-refresh cycles, said pulse signal being related to the self-refresh operation.
Dependencies are inferred from the claim text.