Semiconductor device and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTakao Kamoshima, Hiroki Takewaka, Takashi Yamashita
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Abstract
A semiconductor device with high reliability is provided in which an insulating property of an insulating layer is high and connection failure is prevented. The semiconductor device includes: a silicon substrate; a low-temperature aluminum film formed on silicon substrate and including a polycrystal; and a high-temperature aluminum film. An opening is formed in a surface of a high-temperature aluminum film by a crystal grain boundary. A distance between side walls of the opening becomes small as closer to silicon substrate.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a conductive layer formed on said semiconductor substrate and including polycrystals, said conductive layer including in its surface a recess caused by a crystal grain boundary and having side walls formed such that a distance therebetween becomes small as closer to said semiconductor substrate.
A semiconductor device, comprising:
- a first conductive layer formed on a semiconductor substrate and including a polycrystal having a first average grain size;
- a second conductive layer formed on said first conductive layer and including a polycrystal having a second average grain size greater than said first average grain size;
- and
- a third conductive layer formed on said second conductive layer and including a polycrystal having a third average grain size smaller than said second average grain size.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive layer including a polycrystal on a semiconductor substrate, said conductive layer having a recess in its surface formed by a crystal grain boundary, a distance between side walls of said recess becoming large as closer to said semiconductor substrate;
- and
- processing said side walls of said recess such that the distance therebetween becomes small as closer to said semiconductor substrate.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first conductive layer on a semiconductor substrate at a first temperature;
- forming a second conductive layer on said first conductive layer at a second temperature higher than said first temperature;
- and
- forming a third conductive layer on said second conductive layer at a third temperature lower than said second temperature.
Dependencies are inferred from the claim text.