Semiconductor device
OwnerTakuro Asazu, Atsushi Ono +1inventors
InventorsTakuro Asazu, Atsushi Ono, Shinji Yamaguchi
Life of this patent
Estimating the term…
Abstract
Formed on the semiconductor chip surface are electrode pads, on which electroless Ni plated bumps are formed. The electroless Ni plated bumps are arranged in at least two rows in parallel with the two sides of the semiconductor chip, opposing each other. Each electroless Ni bump is 5 μm or more in height and the surface is coated with Au plating as a metal film. The surface of the conductor leads is coated with Sn plating. The conductor leads and bumps are heated and pressed by a bonding tool to crate Au/Sn eutectic alloy junctions.
Claims5
A semiconductor device in which bumps formed on a semiconductor chip and a conductor pattern formed on a substrate are connected, characterized in that
- the bump is comprised of Ni and a metal film having a thickness falling within a specified range, formed over Ni;
- the conductor pattern is coated with a metal film having a thickness falling within a specified range;
- and
- the connection is formed by alloying the metal films.
Dependencies are inferred from the claim text.