Method and apparatus for endpointing planarization of a microelectronic substrate

A microelectronic substrate, comprising:

• a semiconductor material having a surface with a device region and an isolating region adjacent the device region, the isolating region having semiconductor material removed therefrom and being recessed into the surface of the semiconductor material;
• a first material disposed on the device region of the semiconductor material in the device region;
• a second material disposed on the first material;
• and
• a third material disposed on the second material, the third material having a fracture resistance that is greater than a fracture resistance of the second material.

A microelectronic substrate, comprising:

• a semiconductor material having a first surface and a second surface opposite the first surface, the first surface having a device region and an etched trench recessed relative to the device region;
• an oxide layer disposed on the device region of the semiconductor material;
• a nitride layer disposed on the oxide layer to stiffen the oxide layer;
• and
• an endpointing layer disposed on the nitride layer, the endpointing layer including a polysilicon material and having a hardness less than a hardness of the nitride layer.

A method for processing a microelectronic substrate having a first material disposed on a surface of the microelectronic substrate, the method comprising:

• stiffening the first material by disposing a second material on the first material of the microelectronic substrate;
• disposing on the second material an endpointing material having a hardness less than a hardness of the second material;
• removing material, including at least a portion of the endpointing material, from the microelectronic substrate by planarization;
• and
• halting removal of material from the microelectronic substrate in response to detecting endpointing material removed from the microelectronic substrate.

A method for processing a microelectronic substrate having a surface with at least one trench and an oxide material on the surface adjacent the trench, the method comprising:

• disposing a nitride stiffening layer on the oxide material;
• disposing on the nitride layer a polysilicon endpointing layer having a hardness less than a hardness of the nitride layer;
• removing material, including at least a portion of the endpointing layer, from the microelectronic substrate by chemical-mechanical planarization;
• and
• halting removal of material from the microelectronic substrate in response to detecting removal of material from the endpointing layer adjacent the trench.