Nitride based transistors on semi-insulating silicon carbide substrates
AssigneeCree, Inc.
InventorsScott Thomas Sheppard, Scott Thomas Allen, John Williams Palmour
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Abstract
A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.
Claims35
A high electron mobility transistor (HEMT) comprising:
- a semi-insulating silicon carbide substrate;
- an aluminum nitride buffer layer on said substrate;
- an insulating gallium nitride layer on said buffer layer;
- an active structure of aluminum gallium nitride on said gallium nitride layer;
- a passivation layer on said aluminum gallium nitride active structure;
- and
- respective source, drain and gate contacts to said aluminum gallium nitride active structure.
A high electron mobility transistor (HEMT) comprising:
- a semi-insulating silicon carbide substrate;
- a heterojunction structure between two different group III nitride semiconductor materials;
- and
- an aluminum nitride buffer layer between said heterojunction structure and said substrate.
A high electron mobility transistor (HEMT) that comprises a semi-insulating silicon carbide substrate and a heterojunction between gallium nitride (GaN) and aluminum gallium nitride (AlGaN) and that is characterized by the performance characteristics of FIG. 4.
A high electron mobility transistor (HEMT) that comprises a semi-insulating silicon carbide substrate and a heterojunction between gallium nitride (GaN) and aluminum gallium nitride (AlGaN) and that is characterized by the performance characteristics of FIG. 3.
A high electron mobility transistor (HEMT) that comprises a semi-insulating silicon carbide substrate and a heterojunction between gallium nitride (GaN) and aluminum gallium nitride (AlGaN) and that is characterized by the performance characteristics of FIG. 2.
A high electron mobility transistor (HEMT) comprising:
- a semi-insulating silicon carbide substrate;
- a heterojunction structure between two different group III nitride semiconductor materials;
- ohmic contacts to said heterojunction materials to define respective source, gate and drain portions of said transistor;
- and
- a passivation layer covering the top surface of said heterojunction materials and covering at least portions of said ohmic contacts.
Dependencies are inferred from the claim text.