Electron beam lithography apparatus and lithography method
OwnerKazui Mizunoinventor
Life of this patent
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Abstract
An electron beam lithography apparatus includes a control device in which, for each column stripe in each drawing time of multiple drawing, optional conditions of dividing a pattern to be drawn on the sample can be set; and a time obtained by dividing a total irradiation time by the number of total drawing times is set to an electron beam-irradiation time. Further, the control device controls a deflection device so as to deflect the electron beam in accordance with the set conditions of pattern-division and the set electron beam-irradiation time.
Claims11
An electron beam lithography apparatus comprising:
- a sample-holding device for holding a sample for lithography, which is driven to move said sample;
- a drive device for driving said sample-holding device;
- an electron beam-generation device for generating an electron beam to draw a pattern on said sample;
- a deflection device for deflecting said generated electron beam to a desired position on said sample;
- a length-measuring device for measuring the position of said sample;
- and
- a control device in which conditions of pattern data-division are set to divide a pattern to be drawn on said sample into sub-patterns of desired sizes, for controlling said deflection device so as to deflect said electron beam in accordance with said set conditions of pattern data-division.
An electron beam lithography apparatus comprising:
- a sample-holding device for holding a sample for lithography, which is driven to move said sample;
- a drive device for driving said sample-holding device;
- an electron beam-generation device for generating an electron beam to draw a pattern on said sample;
- a deflection device for deflecting said generated electron beam to a desired position on said sample;
- a length-measuring device for measuring the position of said sample;
- and
- a control device including a control computer which controls said deflection device so as to irradiate a predetermined position on said sample with said electron beam;
- wherein said control computer executes:
- (1) a function for setting the number N of times of multiple drawing,
- (2) a function for setting optional conditions of dividing pattern data to be drawn, for each column stripe,
- (3) a function for setting an irradiation time of said electron beam,
- (4) a function for outputting an instruction signal to start operations of drawing pattern data on said sample, and
- (5) a function for determining whether or not the number n of times of the performed drawing reaches the set number N, and continuing said operations of said multiple drawing until said number n reaches the number N.
An electron beam lithography method comprising the steps of:
- deflecting an electron beam to a desired position on an sample for lithography;
- controlling a deflection device so as to irradiate a designated position on said sample with said electron beam;
- and
- setting optional conditions of dividing pattern data to be drawn on said sample, into sub pattern-data of desired sizes, for each column stripe in multiple drawing;
- wherein said electron beam is controlled to be deflected in accordance with said set conditions of dividing patter data.
An electron beam lithography method comprising the steps of:
- deflecting an electron beam to a desired position on an sample for lithography;
- controlling a deflection device so as to irradiate a designated position on said sample with said electron beam;
- and
- setting optional conditions of dividing pattern data to be drawn on said sample, into sub pattern-data of desired sizes, for each column stripe in multiple drawing;
- wherein an control computer for performing the step of controlling said deflection device executes the steps of:
- (1) setting the number N of times of multiple drawing,
- (2) setting conditions of dividing pattern data to be drawn,
- (3) setting an irradiation time of said electron beam,
- (4) outputting an instruction signal to start operations of drawing pattern data on said sample, and
- (5) determining whether or not the number n of times of the performed drawing reaches the set number N, and continuing said operations of said multiple drawing until said number n reaches the number N.
Dependencies are inferred from the claim text.