Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display (tft- lcd using the same
AssigneeSamsung Electronics Co., Ltd.
InventorHEON-JE KIM
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Abstract
A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same. In the method of crystallizing the silicon film, an amorphous silicon film is formed on a substrate and a reflective film pattern is formed on the amorphous silicon film. The silicon film is crystallized by irradiating a laser onto the amorphous silicon film. The reflective film pattern is formed to expose the channel of the thin film transistor in the amorphous silicon film.
Claims14
A method of crystallizing a silicon film, comprising the steps of:
- forming an amorphous silicon film on a substrate;
- forming a reflective film pattern on the amorphous silicon film;
- and
- crystallizing the silicon film by irradiating a laser onto the amorphous silicon film in which the reflective film pattern is formed.
A method of crystallizing a silicon film, comprising the steps of:
- forming an amorphous silicon film on a substrate;
- patterning the amorphous silicon film;
- and
- crystallizing the silicon film by irradiating a laser onto the area excluding a portion which will operate as a seed in the amorphous silicon film.
A method of manufacturing a thin film transistor-liquid crystal display, comprising the steps of:
- forming an amorphous silicon film on the overall surface of a substrate including a pixel portion and a driving circuit portion;
- patterning the amorphous silicon film of the driving circuit portion;
- crystallizing the silicon film by irradiating a laser onto the area excluding a portion which will operate as a seed in the amorphous silicon film;
- and
- forming a source and a drain of said thin film transistor in the pixel portion and the driving circuit portion by doping impurities on the crystallized silicon film.
Dependencies are inferred from the claim text.