US 2001/0012700 A1 · SEMICONDUCTOR PROCESSING METHODS OF CHEMICAL VAPOR DEPOSITING SIO2 ON A SUBSTRATE

Abstract

The invention provides semiconductor processing methods of depositing SiO2 on a substrate. In a preferred aspect, the invention provides methods of reducing the formation of undesired reaction intermediates in a chemical vapor deposition (CVD) decomposition reaction. In one implementation, the method is performed by feeding at least one of H2O and H2O2 into a reactor with an organic silicon precursor. For example, in one exemplary implementation, such components are, in gaseous form, fed separately into the reactor. In another exemplary implementation, such components are combined in liquid form prior to introduction into the reactor, and thereafter rendered into a gaseous form for provision into the reactor. The invention can be practiced with or in both hot wall and cold wall CVD systems.

Claims38

Dependent claims

A semiconductor processing method of chemical vapor depositing SiO2 on a substrate comprising:

placing a substrate within a chemical vapor deposition reactor;
feeding an organic silicon precursor into the chemical vapor deposition reactor having the substrate positioned therein under conditions effective to decompose the precursor into SiO2 which deposits on the substrate and into a gaseous oxide of hydrogen;
and
feeding an additional quantity of the gaseous oxide of hydrogen into the reactor while feeding the organic silicon precursor into the reactor.

1 more element

Dependencies are inferred from the claim text.

Semiconductor processing methods of chemical vapor depositing sio2 on a substrate

Life of this patent

Semiconductor processing methods of chemical vapor depositing sio2 on a substrate

Life of this patent

Abstract

Claims38