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AssigneeSymetrix Corporation
InventorsShinichiro Hayashi, Vikram Joshi, Narayan Solayappan, Joseph D. Cuchiaro, Carlos A. Paz de Araujo
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A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000 ppm, preferably <100.
An integrated circuit comprising a non-ferroelectric, high dielectric constant insulator, said insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of an interlayer oxide with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides.
An integrated circuit comprising a high dielectric constant insulator, said insulator including a thin film of a metal oxide, said thin film being an actual stacked structure comprising an interlayer oxide layer having an interface with a non-ferroelectric, metal oxide layer selected from the group consisting of perovskite layers, tungsten-bronze-type oxide layers, and pyrochlore-type oxide layers.
An integrated circuit having a metal oxide thin film comprising an actual stacked structure including an interlayer oxide layer alternating with a metal oxide layer selected from the group consisting of perovskite layers and pyrochlore-type oxide layers, said thin film including at least three interfaces between said interlayer oxide and said metal oxide.
An integrated circuit comprising a non-ferroelectric, high dielectric constant insulator thin film, said thin film being an actual stacked structure comprising an interlayer oxide layer alternating with a metal oxide layer selected from the group consisting of perovskite layers, tungsten-bronze-type oxide layers, and pyrochlore-type oxide layers.
An integrated circuit comprising a thin film of a metal oxide, said thin film being a virtual stacked structure comprising an interlayer oxide layer alternating with a metal oxide layer selected from the group consisting of tungsten-bronze-type oxide layers and pyrochlore-type oxide layers.
An integrated circuit including a non-ferroelectric, high dielectric constant insulator thin film comprising a metal oxide selected from the group consisting of AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La;
An integrated circuit including a non-ferroelectric, high dielectric constant insulator thin film comprising a metal oxide having the formula AB2O6, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La;
An integrated circuit comprising a non-ferroelectric high dielectric constant thin film material having a formula AB2O6, wherein A represents at least one of strontium and barium, and B represents at least one of tantalum and niobium.
An integrated circuit comprising a non-ferroelectric high dielectric constant thin film material having a formula SrB2O6, wherein B represents at least one of tantalum and niobium.
A charge storage device comprising a non-ferroelectric, high dielectric constant thin film material having a formula AB2O6, wherein A represents at least one of strontium and barium, and B represents at least one of tantalum and niobium.
A transistor comprising a non-ferroelectric high dielectric constant thin film material comprising a tungsten-bronze-type oxide.
A ferroelectric integrated circuit memory cell comprising a ferroelectric layer;
An integrated circuit including a plurality of material layers, said integrated circuit comprising:
An integrated circuit comprising a semiconductor substrate, a high dielectric constant insulator, and a diffusion barrier layer, said diffusion barrier layer being a different material than said high dielectric constant insulator, said high dielectric constant insulator comprising a metal oxide, said metal oxide having a stoichiometric formula AB2O6, wherein A represents at least one of strontium, barium, calcium, lead and magnesium, and B represents at least one of tantalum, niobium, and tungsten.
A liquid precursor for fabricating an insulator in an integrated circuit, said precursor comprising metal atoms in relative molar proportions for forming a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of an interlayer oxide with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides.
A liquid precursor for fabricating an insulator in an integrated circuit, said precursor comprising metal atoms in relative molar proportions for forming a metal oxide selected from the group consisting of AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La;
A liquid precursor for fabricating a layer in a thin film having an actual stacked structure, said precursor comprising metal atoms in relative molar proportions for forming a metal oxide selected from the group consisting of perovskites, tungsten-bronze-type oxides and pyrochlore-type oxides.
A method for forming an integrated circuit comprising a high dielectric constant insulator, said method comprising steps of:
A method for forming an integrated circuit comprising a high dielectric constant insulator, said method comprising steps of:
A method for forming an integrated circuit comprising a high dielectric constant thin film insulator, said method comprising steps of:
A method of forming a transistor comprising:
A method of forming an integrated circuit comprising:
Dependencies are inferred from the claim text.