US 2001/0012697 A1 · Apparatus for manufacturing a semiconductor device in a CVD reactive chamber

Abstract

In a method of producing a semiconductor apparatus, when a thin film is formed on a semiconductor substrate in the CVD reactive chamber by the CVD method, a remaining region is provided where a gas for film formation remains to a proximity of a surface of the semiconductor substrate, and a CVD thin film is provided on the substrate by decomposing only the gas for film formation existing in the remaining region without supplying an additional gas from the outside of the remaining region to the remaining region. With the method, when the thin film is formed on the substrate by the CVD method, the thin film is efficiently deposited on the substrate in a reactive chamber by efficiently using a reactive gas for film formation introduced into a CVD reactive chamber, to thereby reduce cost of forming the thin film remarkably.

Claims26

Dependent claims

A method of producing a semiconductor apparatus, when a thin film is formed by a CVD method on a semiconductor substrate in a CVD reactive chamber, said method comprising the steps of:

providing a remaining region where a gas for film formation remains to a proximity of a surface of said semiconductor substrate;
and
forming a CVD thin film on said substrate by decomposing only the gas for film formation existing in said remaining region without supplying an additional gas from the outside of the remaining region to said remaining region.

A semiconductor production equipment, comprising:

a CVD reactive chamber for inducing CVD reaction;
a suscepter, for placing a semiconductor substrate, which is provided to the outside of said CVD reactive chamber;
a first pipe arrangement, for introducing a reactive gas, which is provided to the outside of said CVD reactive chamber and is connected to said CVD reactive chamber;
a first mass flow controller and a first valve provided in a midway of said first pipe arrangement;
a second pipe arrangement, for introducing an inert gas, which is provided to the outside of said CVD reactive chamber and is connected to said CVD reactive chamber;
a second mass flow controller and a second valve provided to a midway of said second pipe arrangement;
a third pipe arrangement, for exhausting a gas, which is provided to the outside of said CVD reactive chamber and is connected to said CVD reactive chamber;
a pressure gauge and a vacuum exhaust pump which are connected to said third pipe arrangement;
a main valve and a conductance valve for adjusting pressure, which are provided between a pressure gauge connecting section and a pump connecting section of said third pipe arrangement;
a valve controller for independently controlling said valves;
a substrate introducing chamber connected to said CVD reactive chamber via a gate valve;
a gate valve controller for controlling opening and closing of said gate valve;
a substrate transporter for introducing said semiconductor substrate from said substrate introducing chamber into said CVD reactive chamber;
an exhausting device for setting pressure in said substrate introducing chamber to a predetermined value;
a cover for surrounding a circumference of said semiconductor substrate in front of said suscepter and forming a constant volume of a closed space to be a remaining region for a gas;
a cover driving device which is provided so that said cover is moved in front of said suscepter between a position which surrounds the circumference of said semiconductor substrate and a forward position of the position which surrounds the circumference of said semiconductor substrate;
and
a heater, for heating said suscepter and said semiconductor substrate, which is provided to a rear side of said suscepter in said CVD reactive chamber.

15 more elements

A semiconductor production equipment, comprising:

a CVD reactive chamber for inducing CVD reaction;
a substrate stand-by chamber which is linked with said CVD reactive chamber;
a shutter which freely opens and closes a position which divides said CVD reactive chamber and said substrate stand-by chamber;
a shaft which goes through a bottom plate of said substrate stand-by chamber and freely moves up and down;
a shaft driving device for driving said shaft in an up-down direction;
a cylindrical cover which is provided to a top of a chamber of said shaft, has an opening in a front towards said CVD reactive chamber, surrounds a circumference of said semiconductor substrate with said opening being closed by said semiconductor substrate, and forms a constant volume of a closed space to be a gas remaining region;
a first pipe arrangement, for introducing a reactive gas, which is provided to the outside of said substrate stand-by chamber and is connected to said CVD reactive chamber;
a first mass flow controller and a first valve which are provided in a midway of said first pipe arrangement;
a second pipe arrangement, for introducing an inert gas, which is provided to the outside of said CVD reactive chamber and is connected to said CVD reactive chamber;
a second mass flow controller and a second valve which are provided to a midway of said second pipe arrangement;
a third pipe arrangement, for exhausting a gas, which is provided to the outside of said CVD reactive chamber and is connected to said CVD reactive chamber;
a pressure gauge and a vacuum exhaust pump which are connected to said third pipe arrangement;
a first main valve and a first conductance valve for adjusting pressure which are provided between a pressure gauge connecting section and a pump connecting section of said third pipe arrangement;
a fourth pipe arrangement, for discharging a gas, which is provided to the outside of said substrate stand-by chamber and is connected to said substrate stand-by chamber;
a pressure gauge and a vacuum exhaust pump which are connected to said fourth pipe arrangement;
a second main valve and a second conductance valve for adjusting pressure which are provided between a pressure gauge connecting section and a pump connecting section of said fourth pipe arrangement;
a valve controller for independently controlling said valves;
a substrate introducing chamber which is connected to said substrate stand-by chamber via a gate valve;
an exhausting device for reducing pressure in said substrate introducing chamber to a predetermined value;
a gate valve controller for opening and closing said gate valve;
a substrate transporting unit which has a function for introducing said semiconductor substrate from said substrate introducing chamber into said substrate stand-by chamber, a function for retaining said semiconductor substrate in said substrate stand-by chamber in a position separated from said cover, and a function for placing a surface to be processed of said semiconductor substrate towards the shaft side so as to close the opening of said cylindrical cover;
and
a heater for heating said semiconductor substrate through a top plate of said CVD reactive chamber.

20 more elements

Dependencies are inferred from the claim text.

Apparatus for manufacturing a semiconductor device in a CVD reactive chamber

Life of this patent

Apparatus for manufacturing a semiconductor device in a CVD reactive chamber

Life of this patent

Abstract

Claims26