Semiconductor device and fabricating method thereof
AssigneeNEC Corporation
InventorKoji Hamada
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Abstract
An interlayer film covering a semiconductor device formed on the semiconductor substrate has a film having ability of gettering the metal impurities invading from an upper portion of the interlayer film, and with this ability, the metal impurities are prevented from reaching the semiconductor substrate.
Claims14
A semiconductor device comprising an interlayer film formed on a semiconductor substrate, wherein said interlayer film includes a diffusion-preventing film for preventing metal impurities invading from an upper portion of said interlayer film from reaching said semiconductor substrate.
A fabricating method of a semiconductor device comprising the steps of:
- forming, on a semiconductor substrate, a diffusion-preventing film for preventing metal impurities invading from an upper portion of said semiconductor substrate from reaching said semiconductor substrate,
- forming an insulating film on said diffusion-preventing film,
- forming a wire groove in said insulating film,
- forming a metal film in said wire groove and on said insulating film, and
- removing said metal film deposited on said insulating film by a CMP such that said metal film is remained in said wire groove to form a metal wire.
Dependencies are inferred from the claim text.