In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
AssigneeMicron Technology, Inc.
InventorWeimin Li
Life of this patent
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Abstract
A method of de-oxidizing a surface onto which a refractory metal or molecule which contains a refractory metal atom will be adhered. The method utilizes a plasma which includes a gas such as argon, nitrogen, helium or hydrogen, or a mixture of any of the foregoing, to remove oxygen molecules from the surface to which adherence of the refractory metal is desired. Radicals in the plasma coat the surface to prevent further oxidation thereof. The method also includes techniques for depositing refractory metals onto a surface such as a substrate or layer of semiconductor material on which integrated circuitry has been fabricated.
Claims19
A method for deoxidizing at least a portion of a surface prior to depositing metal onto the surface, comprising exposing at least the portion of the surface to a plasma including a quantity of at least one gas selected from the group consisting essentially of argon, nitrogen, helium, and hydrogen.
A method for forming a contact, comprising:
- providing a semiconductor substrate;
- forming a layer comprising base material over at least a portion of a surface of said semiconductor substrate;
- exposing said base material to a plasma to reduce oxidation thereof;
- and
- depositing metal over said layer.
A method for filling a via, comprising:
- providing a semiconductor substrate;
- forming a layer comprising base material over at least a portion of said semiconductor substrate;
- exposing said layer to a plasma to reduce oxidation of at least an exposed surface of said layer;
- and
- depositing metal over said layer.
Dependencies are inferred from the claim text.