Method of manufacturing thin film transistor

Abstract

The present invention discloses a method of manufacturing a thin film transistor, including: preparing a process chamber having a stage; providing a substrate on the stage of the process chamber; injecting a first mixed gas of NH3, N2 and SiH4 into the process chamber; forming a plasma in the process chamber and forming a silicon nitride film (SiNx) on the substrate; injecting a second mixed gas of H2 and SiH4 into the process chamber while removing the first mixed gas in the plasma state; forming a pure amorphous silicon film (a-Si:H) on the silicon nitride film using the second mixed gas; injecting a third mixed gas of H2, SiH4 and PH3 into the process chamber while removing the second mixed gas in the plasma state; and forming a doped amorphous silicon film (n+a-Si:H) on the silicon nitride film using the second mixed gas.

Dependencies are inferred from the claim text.