Thin film transistor and method of fabricating the same
AssigneeLG.Philips LCD Co., Ltd.
InventorSeong-Su Lee
Life of this patent
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Abstract
A method of manufacturing a thin film transistor. A gate electrode is formed on a substrate. Then a first gate insulation layer is formed on the gate electrode and on the substrate. The first gate insulation layer is then cleaned to remove contaminates. After cleaning, a second gate insulation layer is then formed on the first gate insulation layer. Beneficially, the first and second gate insulation layers are of the same material. An active layer having an ohmic contact layer is then formed on the second insulation layer. Spaced apart source and drain electrodes are then formed on the ohmic contact.
Claims14
A method of manufacturing a TFT, comprising:
- forming a gate electrode on a substrate;
- forming a first gate insulation layer over the gate electrode and over the substrate;
- cleaning the first gate insulation layer;
- forming a second gate insulation layer over the first gate insulation layer;
- sequentially forming an active layer and an ohmic contact layer;
- forming spaced apart source and drain electrodes on the ohmic contact layer;
- and
- forming a channel region by etching the ohmic contact layer.
A thin film transistor, comprising:
- a substrate;
- a gate electrode on said substrate;
- a first gate insulation layer on said gate electrode and on said substrate;
- a second gate insulation layer on said first gate insulation layer;
- an active layer on said second insulation layer;
- an ohmic contact layer on said active layer;
- and
- spaced apart source and drain electrodes on said ohmic contact layer.
Dependencies are inferred from the claim text.