Saw filter manufactured by using GaN single crystal thin film, and manufacturing method therefore

Abstract

A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band according to the present invention includes an α-Al2O3 single crystal substrate. A GaN piezoelectric single crystal thin film of [0001] direction is formed to a thickness of 0.3-300 μm on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band according to the present invention includes the following steps. That is, an α-Al2O3 single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of [0001] direction is epitaxially grown to a thickness of 0.3-300 μm on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.

Dependencies are inferred from the claim text.