Semiconductor integrated circuit device
AssigneeKabushiki Kaisha Toshiba
InventorTADAHIRO KURODA
Life of this patent
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Abstract
The disclosed semiconductor integrated circuit device can control the threshold thereof without adding any other supply voltages except a drive supply voltage and a ground supply voltage. The semiconductor integrated circuit device comprises: a substrate potential generating circuit operative on the basis of a control signal, for deepening a substrate bias by pumping out charges from a semiconductor substrate when activated, but for setting an output thereof to a high impedance when deactivated; and a switch circuit operative on the basis of the control signal and turned on when the substrate potential generating circuit is deactivated, to set potential of the semiconductor substrate to a supply potential, but turned off when the substrate potential generating circuit is activated.
Claims20
A semiconductor integrated circuit device, comprising:
- a substrate potential generating circuit operative on the basis of a control signal, for deepening a substrate bias by pumping out charges from a semiconductor substrate when activated, but for setting an output thereof to a high impedance when deactivated;
- and
- a switch circuit operative on the basis of the control signal and turned on when said substrate potential generating circuit is deactivated, to set potential of the semiconductor substrate to a supply potential, but turned off when said substrate potential generating circuit is activated.
A semiconductor integrated circuit device, comprising:
- a substrate potential detecting circuit for detecting potential of a semiconductor substrate;
- a substrate potential generating circuit for deepening a substrate bias by pumping out charges from the semiconductor substrate when activated, but for setting an output thereof to a high impedance when deactivated;
- a switch circuit turned on when said substrate potential generating circuit is deactivated, to connect the semiconductor substrate to a supply voltage, but turned off when said substrate potential generating circuit is activated;
- and
- a control circuit for driving said substrate potential generating circuit and said switch circuit on the basis of a control signal, a value detected by said substrate potential detecting circuit, and a set value, to control the potential of the semiconductor substrate to the set value or a potential of the supply voltage.
A semiconductor integrated circuit device, comprising:
- a leak current detecting circuit for detecting leak current of a transistor formed on a semiconductor substrate;
- a substrate potential generating circuit for deepening a substrate bias by pumping out charges from the semiconductor substrate when activated, but for setting an output thereof to a high impedance when deactivated;
- a switch circuit turned on when said substrate potential generating circuit is deactivated, to connect the semiconductor substrate to a supply voltage, but turned off when said substrate potential generating circuit is activated;
- and
- a control circuit for driving said substrate potential generating circuit and said switch circuit on the basis of a control signal, a value detected by said substrate potential detecting circuit and a set value, to control the potential of the semiconductor substrate to the set value or a potential of the supply voltage.
A semiconductor integrated circuit device, comprising:
- a first pump circuit having an output terminal connected to a first-conductivity type semiconductor substrate, for pumping out first-conductivity type carriers;
- a first MOSFET with a second-conductivity type different from the first-conductivity type having a source terminal connected to the output terminal of said first pump circuit and a drain terminal connected to a first supply voltage;
- a second pump circuit having an output terminal connected to a gate terminal of the first MOSFET, for pumping out first-conductivity type carriers;
- and
- a second MOSFET with the first-conductivity type having a source terminal connected to a second supply voltage, a gate terminal to which a control signal is applied, and a drain terminal connected to the gate terminal of said first MOSFET.
Dependencies are inferred from the claim text.