Silicide pattern structures and methods of fabricating the same
AssigneeMicron Technology, Inc.
InventorsSalman Akram, Y. Jeff Hu
Life of this patent
Estimating the term…
Abstract
Silicide interfaces for integrated circuits, thin film devices, and backend integrated circuit testing devices are formed using a barrier layer, such as titanium nitride, disposed over a porous, thin dielectric layer which is disposed between a silicon-containing substrate and a silicidable material which is deposited to form the silicide interfaces for such devices. The barrier layer prevents the formation of a silicide material within imperfections or voids which form passages through the thin dielectric layer when the device is subjected to a high temperature anneal to form the silicide contact from the reaction of the silicidable material and the silicon-containing substrate.
Claims58
A method for forming a contact interface, comprising:
- providing a substrate comprising semiconductor material;
- forming a first layer comprising dielectric material over said semiconductor material;
- forming a second layer comprising barrier material over said dielectric layer;
- exposing at least a portion of at least one active-device region formed in said semiconductor material through said first and second layers;
- disposing an electrically conductive silicidable material different from said barrier material into contact with at least said portion of said at least one active-device region;
- and
- annealing said electrically conductive silicidable material to said at least one active-device region so as to form a silicide contact.
A method for forming a DRAM chip, comprising:
- providing a substrate including semiconductor material;
- forming a first layer comprising dielectric material over said semiconductor material;
- forming a second layer comprising barrier material over said dielectric layer;
- patterning said first and second layers to define a contact opening therethrough and to expose at least a portion of an active-device region of said semiconductor material;
- depositing an electrically conductive silicidable material which is different from said barrier material at least into said contact opening and in contact with said active-device region;
- and
- annealing said electrically conductive silicidable material to said active-device region to form a silicide contact.
A method for forming a contact interface, comprising:
- providing a substrate including semiconductor material with at least one contact protruding therefrom;
- forming a first layer comprising dielectric material over said semiconductor material and said at least one contact;
- forming a second layer comprising polysilicon over said first layer;
- forming a third layer comprising barrier material over said second layer;
- exposing at least a portion of said second layer located over said at least one contact;
- disposing electrically conductive silicidable material which is different from said barrier material into contact with at least said portion of said second layer;
- and
- annealing said electrically conductive silicidable material to at least said portion of said second layer to form a silicide contact.
An intermediate semiconductor device structure, comprising:
- a substrate including a semiconductor material with at least one active-device region;
- a first layer comprising dielectric material located over said substrate;
- a second layer comprising barrier material located over said first layer;
- at least one contact opening formed through said first and second layers, said at least one contact opening exposing at least a portion of said at least one active device region;
- a metal silicide within said at least one contact opening and in contact with said portion of said at least one active device region, said metal of said metal silicide being different from said barrier material.
An intermediate semiconductor device structure, comprising:
- a substrate including semiconductor material with at least one contact protruding therefrom;
- a first layer comprising dielectric material located over said substrate;
- a second layer comprising semiconductive material located over said first layer;
- a third layer comprising barrier material located over said second layer, at least a portion of said second layer being exposed through said third layer;
- a metal silicide contacting said portion of said second layer exposed through said third layer, said metal of said metal silicide being different from said barrier material.
Dependencies are inferred from the claim text.