Method for supressing boron penetrating gate dielectric layer by pulsed nitrogen plasma doping
OwnerWei-Wen Cheninventor
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Abstract
A method for suppressing boron penetrating the gate dielectric layer by pulsed nitrogen plasma doping. A pulsed nitrogen plasma doping process is utilized to dope nitrogen ions into the surface layer in the channel region of the semiconductor substrate. A thermal oxidation step is then performed to form a gate dielectric layer commixed with oxide and oxynitride over the channel region of the semiconductor substrate to avoid boron penetration effect accruing while a boron doped polysilicon layer is subsequently formed on the gate dielectric layer.
Claims23
A method for suppressing boron penetrating a gate dielectric layer by pulsed nitrogen plasma doping, comprising the steps of:
- providing a semiconductor substrate having a channel region;
- performing a pulsed nitrogen plasma doping step to dope nitrogen ions into the surface layer in the channel region;
- and
- performing a thermal oxidation step to form a gate dielectric layer over the channel region of the semiconductor substrate.
A method for suppressing boron penetrating a gate dielectric layer by pulsed nitrogen plasma doping, comprising the steps of:
- providing a semiconductor substrate having a channel region;
- performing a pulsed nitrogen plasma doping step to dope nitrogen ions into the surface layer in the channel region;
- performing a nitrogen annealing step;
- and
- performing a thermal oxidation step to form a gate dielectric layer over the channel region of the semiconductor substrate.
A method for fabricating a PMOS transistor, at least comprising the steps of:
- providing a semiconductor substrate having a channel region;
- performing a pulsed nitrogen plasma doping step to dope nitrogen ions into the surface layer in the channel region;
- performing a thermal oxidation step to form a gate dielectric layer over the channel region of the semiconductor substrate;
- forming a boron doped polysilicon layer over the channel region of the semiconductor substrate;
- and
- forming a source/drain region in the semiconductor substrate and on both sides of the boron doped polysilicon layer.
Dependencies are inferred from the claim text.