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US 2001/0000415 A1Published application
Method of processing films prior to chemical vapor deposition using electron beam processing
AssigneeElectron Vision Corporation
InventorMathew Ross
Life of this patent
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Abstract
A process for the treatment of the surface of dielectric films to remove moisture and other contaminants. Such treatment is done by electron beam exposure in order to prepare the surface for a subsequent chemical vapor deposition of oxide, nitride or oxynitride layers. The films are useful in the manufacture of integrated circuits.
Claims29
A process for treating a dielectric layer on a substrate which comprises
- (a) heating a surface of the dielectric layer and exposing the dielectric layer to electron beam irradiation under vacuum conditions, for a sufficient time, temperature, electron beam energy and electron beam dose to remove substantially all moisture and/or contaminants from the surface of the dielectric layer;
- and
- (b) chemical vapor depositing a chemical vapor deposit material onto the surface of the dielectric layer while maintaining said vacuum conditions.
A process for producing a support for a microelectronic device which comprises:
- (a) applying a dielectric layer onto a substrate;
- (b) curing the dielectric layer;
- (c) heating a surface of the dielectric layer and exposing the dielectric layer to electron beam irradiation under vacuum conditions, for a sufficient time, temperature, electron beam energy and electron beam dose to remove substantially all moisture and/or contaminants from the surface of the dielectric layer;
- and
- (d) chemical vapor depositingchemical vapor deposit material onto the surface of the dielectric layer while maintaining said vacuum conditions.
2 more elements
A support for a microelectronic device which comprises:
- (a) a substrate;
- (b) a cured dielectric layer on the substrate, the surface of which dielectric layer has been exposed to sufficient electron beam radiation to render the dielectric layer surface substantially devoid of moisture and contaminants;
- and
- (c) a chemical vapor deposited chemical vapor deposit material on the surface of the dielectric layer.
1 more element
A microelectronic device which comprises:
- (a) a substrate;
- (b) a cured dielectric layer on the substrate, the surface of which dielectric layer has been exposed to sufficient electron beam radiation to render the dielectric layer surface substantially devoid of moisture and contaminants;
- (c) a chemical vapor deposited chemical vapor deposit material layer on the surface of the dielectric layer;
- and
- (d) a pattern of conductive lines on the chemical vapor deposit material layer.
2 more elements
Dependencies are inferred from the claim text.