Back to results
US 2001/0000011 A1Published application
Method for producing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Toru Takayama
Life of this patent
Estimating the term…
Abstract
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.
Claims1
A semiconductor device comprising:
- a crystalline semiconductor film comprising silicon formed over an insulating surface, said crystalline semiconductor film being an active layer of a thin film transistor having at least one of channel, source, drain regions and containing a catalyst for promoting crystallization of silicon,
- wherein said catalyst is selected from group IV elements, and
- wherein said channel region contains said catalyst at a concentration of 1×1015-5×1019 atoms/cm−3.
Dependencies are inferred from the claim text.