# US 12,772,872 B2 · Semiconductor device having heat sink part that promotes resin-flow > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,772,872 B2 - Document ID: US12772872B2 - Status: Granted - Kind: B2 - Application number: 18/480,886 - Filed: 2023-10-04 - Published: 2024-10-24 - Granted: 2026-10-20 - Earliest claimed: 2023-04-21 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Shuhei Yokoyama; Shogo Shibata - Web page: https://patentgrep.com/patent/US12772872B2 ## CPC - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10W 70/411: {Chip-supporting parts, e.g. die pads} - H10W 70/427: {Bent parts} - H10W 70/461: {specially adapted for cooling} - H10W 90/811: {Multiple chips on leadframes} - H10W 90/10: Configurations of laterally-adjacent chips - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor apparatus includes: a heat sink; a die pad provided above and away from the heat sink; a power chip provided on a surface of the die pad opposite to a surface of the die pad facing the heat sink; and mold resin sealing a portion of the heat sink, the die pad and the power chip, wherein a surface of the heat sink facing the die pad includes a flow promotion part formed to separate from a plane including the die pad in a region overlapping the die pad and not overlapping the power chip. ## Claims ### Claim 1 A semiconductor apparatus comprising: a heat sink; a die pad provided above and spaced apart from the heat sink and extending in a first direction; a power chip provided on a surface of the die pad opposite to a surface of the die pad facing the heat sink; and mold resin sealing a portion of the heat sink, the die pad and the power chip, wherein a surface of the heat sink facing the die pad includes a first portion and a second portion connected to the first portion, the first portion having a first surface extending in the first direction, and the second portion including a second surface extending in a second direction away from the die pad, the second surface beginning to extend away from the die pad in a region on the surface of the heat sink overlapping the die pad and not overlapping the power chip as viewed in a direction toward the surface of the heat sink. ### Claim 2 (depends on 1) The semiconductor apparatus according to claim 1, wherein an outer shape portion of the mold resin is provided with a gate mark that differs in gloss from other portions of the mold resin or differs in height from a surface of the outer shape portion of the mold resin due to a hollow or a projection, and the second portion of the heat sink is provided at a position on the opposite side to a side on which the gate mark is provided. ### Claim 3 (depends on 2) The semiconductor apparatus according to claim 2, wherein the power chip and a diode device are formed of wide bandgap semiconductor. ### Claim 4 (depends on 1) The semiconductor apparatus according to claim 1, further comprising a plurality of the power chips on a plurality of the die pads, wherein the surface of the heat sink facing the die pads includes recesses located at positions corresponding to spaces between adjacent die pads. ### Claim 5 (depends on 4) The semiconductor apparatus according to claim 4, wherein the power chip and a diode device are formed of wide bandgap semiconductor. ### Claim 6 (depends on 1) The semiconductor apparatus according to claim 1, wherein a lead frame provided above and away from the heat sink and having the die pad includes a terminal part exposed from the mold resin, and a bent part connecting the terminal part and the die pad, a surface including the terminal part is provided at a position farther away from the heat sink than a surface including the die pad, and the heat sink includes an inclined part provided along the bent part of the lead frame in a region overlapping the bent part in a planar view. ### Claim 7 (depends on 6) The semiconductor apparatus according to claim 6, wherein the bent part in the lead frame is provided with a slit. ### Claim 8 (depends on 7) The semiconductor apparatus according to claim 7, wherein the power chip and a diode device are formed of wide bandgap semiconductor. ### Claim 9 (depends on 6) The semiconductor apparatus according to claim 6, wherein the power chip and a diode device are formed of wide bandgap semiconductor. ### Claim 10 (depends on 1) The semiconductor apparatus according to claim 1, wherein the power chip includes a reverse-conducting IGBT (RC-IGBT). ### Claim 11 (depends on 10) The semiconductor apparatus according to claim 10, wherein the power chip and a diode device are formed of wide bandgap semiconductor. ### Claim 12 (depends on 1) The semiconductor apparatus according to claim 1, wherein the power chip and a diode device are formed of wide bandgap semiconductor. ### Claim 13 (depends on 1) The semiconductor apparatus according to claim 1, wherein the second surface includes a curved surface that curves in the direction away from the die pad. ### Claim 14 (depends on 1) The semiconductor apparatus according to claim 1, wherein the second surface extends at an increased rate in the second direction toward a second end of the second portion.