# US 12,772,848 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,772,848 B2 - Document ID: US12772848B2 - Status: Granted - Kind: B2 - Application number: 18/647,903 - Filed: 2024-04-26 - Published: 2025-05-15 - Granted: 2026-10-20 - Earliest claimed: 2023-11-13 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Sungchan Kang; Dongkyun Kim; Daehyuk Son; Hotaik Lee; Seogwoo Hong - Web page: https://patentgrep.com/patent/US12772848B2 ## CPC - H10W 40/47: by flowing liquids, e.g. forced water cooling - H10W 90/00: Package configurations - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a semiconductor chip having a semiconductor integrated circuit. A cooling channel is formed in the semiconductor chip. At least a portion of the cooling channel is formed in the semiconductor chip. First wick structures may be arranged on a bottom of the cooling channel that is parallel to an upper surface of the semiconductor chip in a transverse direction. The first wick structures may move a liquid coolant by capillary action in the transverse direction along the bottom of the cooling channel. Second wick structures may be arranged along an inner surface of the vapor chamber and may move the liquid coolant by capillary action in the transverse direction along the inner surface of the vapor chamber. ## Claims ### Claim 1 A semiconductor device comprising: a semiconductor chip including a cooling channel recessed in the semiconductor chip from an upper surface of the semiconductor chip, the cooling channel configured to have a liquid coolant flow therein such as to absorb heat generated during an operation of the semiconductor chip; first wick structures on a bottom of the cooling channel that is parallel to the upper surface of the semiconductor chip in a transverse direction, the first wick structures configured to move the liquid coolant by capillary action in the transverse direction along the bottom of the cooling channel; a vapor chamber above the semiconductor chip and in fluid communication with the cooling channel; second wick structures on an inner surface of the vapor chamber and configured to move the liquid coolant by capillary action in the transverse direction along the inner surface of the vapor chamber; and third wick structures between the first wick structures and the second wick structures and configured to move the liquid coolant from the second wick structures to the first wick structures by capillary action. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the first wick structures comprise a material that is different from a material included in the second wick structures. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the first wick structures comprise silicon, and the second wick structures comprise copper. ### Claim 4 (depends on 2) The semiconductor device of claim 2, wherein the third wick structures comprise copper. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the third wick structures connect together some of the first wick structures and some of the second wick structures that are closest to a step formed between the vapor chamber and the upper surface of the semiconductor chip, and the third wick structures are spaced apart from the step toward an inside of the cooling channel by a capillary distance. ### Claim 6 (depends on 5) The semiconductor device of claim 5, wherein the third wick structures have a conductive wire shape extending between upper surfaces of the first wick structures and upper surfaces of the second wick structures. ### Claim 7 (depends on 5) The semiconductor device of claim 5, wherein the third wick structures comprise: first vertical capillary channels configured to move the liquid coolant in a vertical direction between the third wick structures; and second vertical capillary channels configured to move the liquid coolant in the vertical direction between the step and the third wick structures. ### Claim 8 (depends on 1) The semiconductor device of claim 1, further comprising fourth wick structures that connect together at least some of the first wick structures and at least some of the second wick structures that face each other. ### Claim 9 (depends on 8) The semiconductor device of claim 8, wherein the fourth wick structures have a conductive wire shape extending between upper surfaces of the first wick structures and upper surfaces of the second wick structures. ### Claim 10 (depends on 1) The semiconductor device of claim 1, further comprising a package housing surrounding the semiconductor chip, wherein the upper surface of the semiconductor chip is exposed from the package housing, wherein the vapor chamber is on an upper portion of the package housing. ### Claim 11 (depends on 10) The semiconductor device of claim 10, wherein the second wick structures comprise: 2nd-1 wick structures facing the first wick structures; 2nd-2 wick structures facing the 2nd-1 wick structures; and 2nd-3 wick structures between the 2nd-1 wick structures and the 2nd-2 wick structures. ### Claim 12 (depends on 10) The semiconductor device of claim 10, further comprising an additional semiconductor chip under the 2nd-2 wick structures and within the package housing. ### Claim 13 A semiconductor device comprising: a plurality of semiconductor chips stacked in a vertical direction, the plurality of semiconductor chips including a plurality of cooling channels respectively recessed in the plurality of semiconductor chips from upper surfaces of the plurality of semiconductor chips, the plurality of cooling channels configured to have a coolant flow in a liquid phase therein such as to absorb heat generated during an operation of the plurality of semiconductor chips; a plurality of first wick structures on bottoms of the plurality of cooling channels that are respectively parallel to the upper surfaces of the plurality of semiconductor chips in a transverse direction, the plurality of first wick structures configured to move the coolant by capillary action in the transverse direction along the bottoms of the plurality of cooling channels; a vapor chamber above an uppermost semiconductor chip among the plurality of semiconductor chips, the vapor chamber being in fluid communication with the plurality of cooling channels; second wick structures on an inner surface of the vapor chamber and configured to move the coolant by capillary action in the transverse direction along the inner surface of the vapor chamber; a connection channel penetrating the plurality of semiconductor chips except for lowermost semiconductor chip among the plurality of semiconductor chips; third wick structures between the second wick structures and first wick structures, among the plurality of first wick structures, that are arranged on the uppermost semiconductor chip among the plurality of semiconductor chips, the third wick structures configured to move the coolant in the liquid phase by capillary action from the second wick structures to the first wick structures; and at least one fourth wick structure configured to move the coolant in the liquid phase by capillary action along the connection channel from the second wick structures to at least one of the plurality of first wick structures. ### Claim 14 (depends on 13) The semiconductor device of claim 13, wherein the plurality of first wick structures comprise a material that is different from a material included in the second wick structures. ### Claim 15 (depends on 13) The semiconductor device of claim 13, wherein the plurality of first wick structures comprise silicon, and the second wick structures comprise copper. ### Claim 16 (depends on 13) The semiconductor device of claim 13, wherein the third wick structures and the at least one fourth wick structure comprise copper. ### Claim 17 (depends on 13) The semiconductor device of claim 13, wherein the third wick structures connect together some of the first wick structures and some of the second wick structures that are closest to a step formed between the vapor chamber and the upper surfaces of the plurality of semiconductor chips, and wherein the third wick structures are spaced apart from the step toward an inside of the plurality of cooling channels by a capillary distance. ### Claim 18 (depends on 13) The semiconductor device of claim 13, wherein the at least one fourth wick structure comprises fourth wick structures that are spaced apart from a side wall of the connection channel toward the inside of the plurality of cooling channels by a capillary distance. ### Claim 19 (depends on 13) The semiconductor device of claim 13, further comprising fifth wick structures connecting together some of the first wick structures and some of the second wick structures that face each other, wherein the some of the first wick structures are on the uppermost semiconductor chip among the plurality of semiconductor chips. ### Claim 20 (depends on 13) The semiconductor device of claim 13, further comprising a plurality of package housings respectively surrounding the plurality of semiconductor chips, wherein the upper surfaces of the plurality of semiconductor chips are exposed from the plurality of package housings, respectively, and the vapor chamber is on an upper portion of one of the plurality of package housings that surrounds the uppermost semiconductor chip among the plurality of semiconductor chips.