# US 12,772,564 B2 · Display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,772,564 B2 - Document ID: US12772564B2 - Status: Granted - Kind: B2 - Application number: 18/484,867 - Filed: 2023-10-11 - Published: 2024-04-18 - Granted: 2026-10-20 - Earliest claimed: 2022-10-13 - Assignees: LG Display Co., Ltd. - Applicants: LG Display Co., Ltd. - Inventors: ChangEun Kim; Jinuk Lee; Joong Ha Lee - Web page: https://patentgrep.com/patent/US12772564B2 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - C22C 32/0031: {Matrix based on refractory metals, W, Mo, Nb, Hf, Ta, Zr, Ti, V or alloys thereof} - G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element} - G02F 1/136295: {Materials; Compositions; Manufacture processes} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/6723: {having light shields} - H10D 30/6739: {Conductor-insulator-semiconductor electrodes} - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - C22C: ALLOYS (treatment of alloys C21D, C22F) - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract The present disclosure relates to a display device. According to the present disclosure, since conductive layers disposed on a substrate include a layer formed of a material having a low reflectance, defects in which the conductive layers are visually recognized by a user and visibility decreases can be resolved. ## Claims ### Claim 1 A display device, comprising: a substrate; and a conductive stack on the substrate, the conductive stack including: a first conductive layer including a first sub-conductive layer and a second sub-conductive layer disposed on the first sub-conductive layer; and a second conductive layer disposed on the first conductive layer, the second conductive layer including a first sub-conductive layer and a second sub-conductive layer disposed on the first sub-conductive layer, wherein the first sub-conductive layer of the first conductive layer includes at least one selected from among a first low-reflective material, a second low-reflective material, and a third low-reflective material, wherein the first low-reflective material includes a first metal, a first metal oxide, a second metal oxide, and a third metal oxide; wherein the second low-reflective material includes a second metal and two or more different conductive oxides; and wherein the third low-reflective material including a fourth metal oxide and two or more different conductive oxides, wherein the first sub-conductive layer of the second conductive layer includes at least one selected from the second low-reflective material and the third low-reflective material. ### Claim 2 (depends on 1) The display device of claim 1, wherein the first metal is at least one selected from among molybdenum (Mo), nickel (Ni), copper (Cu), and tungsten (W), the first metal oxide is at least one selected from among MoO2, MoO3, NiO, CuO and Cu2O, the second metal oxide is at least one selected from among Nb2O5, WO3, TiO2, ZrO2 and HfO2, and the third metal oxide is ZnO. ### Claim 3 (depends on 2) The display device of claim 2, wherein the first low-reflective material includes a total of 70 w % to 80 wt % of the first metal and the first metal oxide; 15 w % to 25 wt % of the second metal oxide; and 0 to 5 wt % of the third metal oxide. ### Claim 4 (depends on 3) The display device of claim 3, wherein a weight ratio of the first metal to the first metal oxide is 3 to 15:85 to 97. ### Claim 5 (depends on 1) The display device of claim 1, wherein the second metal is at least one selected from molybdenum (Mo) and tungsten (W), and the conductive oxides are two or more selected from among In2O3, SnO2 and ZnO. ### Claim 6 (depends on 5) The display device of claim 5, wherein the second low-reflective material includes 20 wt % to 40 wt % of the second metal and 60 wt % to 80 wt % of the conductive oxides. ### Claim 7 (depends on 1) The display device of claim 1, wherein the fourth metal oxide is at least one selected from among MoO3, MoO2 and WO3, and the conductive oxides are two or more selected from among In2O3, SnO2 and ZnO. ### Claim 8 (depends on 7) The display device of claim 7, wherein the third low-reflective material includes 50 wt % to 70 wt % of the fourth metal oxide and 30 wt % to 50 wt % of the conductive oxides. ### Claim 9 (depends on 1) The display device of claim 1, wherein each of the second low-reflective material and the third low-reflective material further includes a dopant. ### Claim 10 (depends on 1) The display device of claim 1, wherein each of the first sub-conductive layer of the first conductive layer and the first sub-conductive layer of the second conductive layer has a refractive index (n) of 2.1 to 2.9, and an extinction coefficient (k) of 0.6 to 1.2 and a thickness of 300 Å to 700 Å. ### Claim 11 (depends on 1) The display device of claim 1, wherein a resistance of the first sub-conductive layer of the second conductive layer is smaller than a resistance of the first sub-conductive layer of the first conductive layer. ### Claim 12 (depends on 1) The display device of claim 1, further comprising: a thin film transistor including: a gate electrode disposed on the substrate; a gate insulating layer; an active layer disposed on the gate electrode with the gate insulating layer interposed therebetween; and a source electrode and a drain electrode contacting the active layer, wherein the first conductive layer is the gate electrode of the thin film transistor, and the second conductive layer is at least one of the source electrode and the drain electrode of the thin film transistor. ### Claim 13 (depends on 12) The display device of claim 12, wherein the second conductive layer further includes a third sub-conductive layer disposed on the second sub-conductive layer. ### Claim 14 (depends on 13) The display device of claim 13, wherein the third sub-conductive layer is formed of the second low-reflective material, the third low-reflective material, or at least one metal material selected from among the group consisting of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and silver (Ag). ### Claim 15 (depends on 12) The display device of claim 12, further comprising: a first pad unit and a second pad unit disposed on the substrate, wherein the display device includes a display area and a non-display area adjacent to the display area, wherein the thin film transistor is disposed on the substrate corresponding to the display area, wherein the first pad unit and the second pad unit are disposed in the non-display area, and wherein each of the first pad unit and the second pad unit includes a first pad electrode and a second pad electrode. ### Claim 16 (depends on 15) The display device of claim 15, wherein the first conductive layer is the first pad electrode of the second pad unit, and the second conductive layer is the first pad electrode of the first pad unit. ### Claim 17 (depends on 15) The display device of claim 15, wherein the second pad unit further includes a pad connection electrode disposed between the first pad electrode and the second pad electrode of the second pad unit, and wherein the second conductive layer is the pad connection electrode. ### Claim 18 (depends on 1) The display device of claim 1, further comprising: a thin film transistor including an active layer disposed on the substrate; a gate insulating layer; a gate electrode disposed on the active layer with the gate insulating layer interposed therebetween; and a source electrode and a drain electrode contacting the active layer, wherein the second conductive layer is at least one of the gate electrode, the source electrode, and the drain electrode of the thin film transistor. ### Claim 19 (depends on 18) The display device of claim 18, further comprising: a light blocking layer disposed on the substrate, wherein the first conductive layer is the light blocking layer. ### Claim 20 (depends on 19) The display device of claim 19, further comprising: a first pad unit and a second pad unit disposed on the substrate, wherein the display device includes a display area and a non-display area adjacent to the display area, wherein the thin film transistor is disposed on the substrate corresponding to a display area, wherein the first pad unit and the second pad unit are disposed in the non-display area, and wherein each of the first pad unit and the second pad unit includes a first pad electrode and a second pad electrode. ### Claim 21 (depends on 20) The display device of claim 20, wherein the first conductive layer is the first pad electrode of the first pad unit, and the second conductive layer is the first pad electrode of the second pad unit. ### Claim 22 (depends on 20) The display device of claim 20, wherein the first pad unit further includes a pad connection electrode disposed between the first pad electrode and the second pad electrode of the first pad unit, and the first conductive layer is the pad connection electrode. ### Claim 23 A display device, comprising: a lower substrate; an upper substrate on the lower substrate; a thin film transistor disposed on the upper substrate, the thin film transistor having a gate electrode including a first sub-conductive layer and a second sub-conductive layer disposed on the first sub-conductive layer; and a pad electrode disposed on the upper substrate, wherein the first sub-conductive layer includes a first low-reflective material, and wherein the second sub-conductive layer includes a second low-reflective material or a third low-reflective material, wherein the first low-reflective material includes a first metal, a first metal oxide, a second metal oxide, and a third metal oxide, wherein the second low-reflective material includes a second metal and two or more different conductive oxides, and wherein the third low-reflective material includes a fourth metal oxide and two or more different conductive oxides. ### Claim 24 (depends on 23) The display device of claim 23, wherein the first metal is at least one selected from among molybdenum (Mo), nickel (Ni), copper (Cu), and tungsten (W), the first metal oxide is at least one selected from among MoO2, MoO3, NiO, CuO and Cu2O, the second metal oxide is at least one selected from among Nb2O5, WO3, TiO2, ZrO2 and HfO2, and the third metal oxide is ZnO. ### Claim 25 (depends on 23) The display device of claim 23, wherein the second metal is at least one selected from molybdenum (Mo) and tungsten (W), and the conductive oxides are two or more selected from among In2O3, SnO2 and ZnO.