# US 12,767,671 B2 · Aminoalkoxydisilazane compounds, composition for depositing silicon-containing thin film containing the same and method of manufacturing silicon-containing thin film using the same

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- Number: US 12,767,671 B2
- Document ID: US12767671B2
- Status: Granted
- Kind: B2
- Application number: 18/970,792
- Filed: 2024-12-05
- Published: 2026-07-16
- Granted: 2026-10-20
- Earliest claimed: 2023-12-08
- Assignees: Dnf Co., Ltd.
- Applicants: Dnf Co., Ltd.
- Inventors: Jiho Ryu; Seung Son; Jun Hee Cho; Gun Joo Park; Sung Gi Kim; Yu Jin Cho; Haeng-Don Lim
- Web page: https://patentgrep.com/patent/US12767671B2

## CPC

- C07F 7/1804: {Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896)}
- C09D 1/00: Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)

## Abstract

An aminoalkoxydisilazane compound, a composition for depositing a silicon-containing thin film including the aminoalkoxydisilazane compound, and a method of manufacturing a silicon-containing thin film using the aminoalkoxydisilazane compound are described. The aminoalkoxydisilazane compound is thermally stable and has strong volatility and reactivity, and is used as a silicon-containing precursor to form a silicon-containing thin film having excellent physical and electrical properties and high purity, by various deposition methods.

## Claims

### Claim 1

An aminoalkoxydisilazane compound represented by the following Chemical Formula 1:
wherein:
R1, R11, and R12 are independently of one another C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or R11 and R12 may be linked to each other to form a ring;
R2 and R3 are independently of each other C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy;
R is C1-C7 alkyl or C3-C7 cycloalkyl; and
R4 and R5 are independently of each other C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

### Claim 2 (depends on 1)

The aminoalkoxydisilazane compound of claim 1, wherein:
R1, R11, and R12 are independently of one another C1-C5 alkyl, C3-C7 cycloalkyl, or C2-C4 alkenyl, or R11 and R12 may be linked via C2-C7 alkylene to form a ring;
R2 and R3 are independently of each other C1-C5 alkyl or C3-C7 cycloalkyl;
R is C1-C5 alkyl or C3-C7 cycloalkyl; and
R4 and R5 are independently of each other C1-C5 alkyl, C3-C7 cycloalkyl, or C1-C5 alkoxy.

### Claim 3 (depends on 2)

The aminoalkoxydisilazane compound of claim 2, wherein:
R1, R2, R3, R, R11, and R12 are each C1-C4 alkyl; and
R4 and R5 are independently of each other C1-C4 alkyl or C1-C4 alkoxy.

### Claim 4 (depends on 1)

The aminoalkoxydisilazane compound of claim 1, wherein the aminoalkoxydisilazane compound is represented by the following Chemical Formula 2 or 3:
wherein:
R1, R11, and R12 are independently of one another C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl;
R2, R3, R, and R4a are independently of one another C1-C4 alkyl or C3-C6 cycloalkyl;
R4 and R5 are independently of each other C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy; and
a is an integer of 0 to 4.

### Claim 5 (depends on 4)

The aminoalkoxydisilazane compound of claim 4, wherein:
R1, R11, and R12 are independently of one another C1-C4 alkyl or C2-C3 alkenyl;
R2, R3, R, and R4a are each C1-C4 alkyl;
R4 and R5 are independently of each other C1-C4 alkyl or C1-C4 alkoxy; and
a is an integer of 0 to 3.

### Claim 6 (depends on 1)

The aminoalkoxydisilazane compound of claim 1, wherein the aminoalkoxydisilazane compound is selected from the following structures:

### Claim 7 (depends on 1)

A composition for depositing a silicon-containing thin film comprising the aminoalkoxydisilazane compound of claim 1.

### Claim 8

A method of manufacturing a silicon-containing thin film, the method comprising:
depositing a silicon-containing thin film using (i) an aminoalkoxydisilazane compound represented by the following Chemical Formula 1 or (ii) a composition for depositing a silicon-containing thin film comprising the aminoalkoxydisilazane compound represented by the following Chemical Formula 1:
wherein:
R1, R11, and R12 are independently of one another C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or R11 and R12 may be linked to each other to form a ring;
R2 and R3 are independently of each other C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy;
R is C1-C7 alkyl or C3-C7 cycloalkyl; and
R4 and R5 are independently of each other C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

### Claim 9 (depends on 8)

The method of claim 8, wherein the depositing is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

### Claim 10 (depends on 8)

The method of claim 8, wherein the silicon-containing thin film is a silicon oxide (SiO2) film, a silicon oxycarbide (SiOC) film, a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, a silicon carbonitride (SiCN) film, or a silicon carbide (SiC) film.