Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakashi Saito
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device including a bonding layer made from sintered material and having a configuration capable of avoiding a variation in life span. The semiconductor device includes a conductive plate having a main surface, a semiconductor chip deposited to be opposed to the main surface of the conductive plate, and a bonding layer including porous sintered material and arranged between the conductive plate and the semiconductor chip, wherein a first outer edge of a bonding interface between the bonding layer and the conductive plate is located on the inside of an outer circumference of the semiconductor chip and is located on the inside of a second outer edge of a bonding interface between the bonding layer and the semiconductor chip.
Claims15
A semiconductor device comprising:
- a conductive plate having a main surface;
- a semiconductor chip deposited to be opposed to the main surface of the conductive plate;
- and
- a bonding layer including porous sintered material and arranged between the conductive plate and the semiconductor chip, wherein
- a first outer edge of a bonding interface between the bonding layer and the conductive plate is inside of an outer circumference of the semiconductor chip, and
- the first outer edge is inside of a second outer edge of a bonding interface between the bonding layer and the semiconductor chip by a distance of about 5 micrometers to about 50 micrometers.
A semiconductor device comprising:
- a conductive plate having a main surface;
- a semiconductor chip deposited to be opposed to the main surface of the conductive plate;
- and
- a bonding layer including porous sintered material and arranged between the conductive plate and the semiconductor chip, wherein
- a first outer edge of a bonding interface between the bonding layer and the conductive plate is inside of an outer circumference of the semiconductor chip and is inside of a second outer edge of a bonding interface between the bonding layer and the semiconductor chip, and
- an outer edge of the bonding layer on a side of the bonding layer that is closest to the semiconductor chip projects outward from the outer circumference of the semiconductor chip.
A semiconductor device comprising:
- a conductive plate having a main surface;
- a semiconductor chip deposited to be opposed to the main surface of the conductive plate;
- and
- a bonding layer including porous sintered material and arranged between the conductive plate and the semiconductor chip, wherein
- a first outer edge of a bonding interface between the bonding layer and the conductive plate is an inside of an outer circumference of the semiconductor chip and is inside of a second outer edge of a bonding interface between the bonding layer and the semiconductor chip, and
- a porosity in a part of the bonding layer inside of the first outer edge is higher than a porosity in a part of the bonding layer between an inside of the second outer edge and on an outside of the first outer edge.
Dependencies are inferred from the claim text.