Method for forming a shielding layer on a semiconductor device

A method for forming a semiconductor device, the method comprising:

• providing a substrate strip having a device array with a plurality of device regions defined by a plurality of saw streets, wherein the plurality of device regions is connected together by a wiring grid formed on a front surface of the substrate strip;
• singulating at the saw streets the substrate strip to form a plurality of semiconductor devices each corresponding to one of the plurality device regions, wherein each semiconductor device has a substrate, a bond pad, a dielectric layer, one or more electronic components and an encapsulant layer, the bond pad which is a part of the wiring grid is formed on a front side of the substrate and extends to a first lateral surface of the substrate, the dielectric layer is formed on a front side of the substrate and extends from the bond pad to a second lateral surface of the substrate opposite to the first lateral surface of the substrate, the encapsulant layer is supported on a back side of the substrate and the one or more electronic components are encapsulated in the encapsulant layer;
• etching a portion of the bond pad adjacent to the first lateral surface, to form a gap between the bond pad and the first lateral surface;
• attaching a filler onto the bond pad to fill the gap;
• placing the semiconductor device on a carrier such that the front side of the substrate is close to the carrier;
• applying a shielding layer to a back side of the substrate and the first lateral surface and the second lateral surface of the substrate, wherein the filler keeps the bond pad apart from the shielding layer at the first lateral surface, the dielectric layer contacts the shielding layer at the second lateral surface;
• and
• unloading the semiconductor device from the carrier such that at least a portion of the bond pad is exposed from the front side of the semiconductor device.