Double-side cooled power modules with sintered-silver interposers

A power module, comprising:

• a first substrate;
• a second substrate comprising a first inner metal layer and a second inner metal layer;
• a plurality of semiconductor transistor die positioned between the first substrate and the second substrate, a bottom surface of a first semiconductor transistor die among the plurality of semiconductor transistor die being secured in electrical contact to the first inner metal layer of the second substrate using sintered silver paste and a bottom surface of a second semiconductor transistor die among the plurality of semiconductor transistor die being secured in electrical contact to the second inner metal layer of the second substrate using sintered silver paste;
• a plurality of power terminals;
• a plurality of terminal pins;
• and
• a first plurality of sintered-silver interposers bonded to a top contact of the first semiconductor transistor die and positioned between the first substrate and the second substrate in the power module and a second plurality of sintered-silver interposers bonded to a top contact of the second semiconductor transistor die and positioned between the first substrate and the second substrate in the power module.