Semiconductor package and manufacturing method thereof

A semiconductor package, comprising:

• a semiconductor die;
• a stack of composite conductive structures disposed adjacent the semiconductor die, the stack of composite conductive structures comprising:
• a lower tier and an upper tier stacked upon the lower tier, each of the lower tier and the upper tier comprising:
• a support layer;
• through material vias (TMVs) penetrating through the support layer;
• and
• a conductive adhesive member underlying the support layer and the TMVs;
• an insulating encapsulation extending along sidewalls of the semiconductor die and the stack of composite conductive structures, wherein a thickness of the stack of composite conductive structures is substantially the same as a thickness of the insulating encapsulation;
• and
• a first redistribution structure and a second redistribution structure disposed on two opposing sides of the semiconductor die, wherein the semiconductor die is electrically coupled to the first redistribution structure through the second redistribution structure, the TMVs, and the conductive adhesive members.

A manufacturing method of a semiconductor package, comprising:

• forming a plurality of composite conductive structures, wherein each of the composite conductive structures comprises a support layer, through material vias (TMVs) penetrating through the support layer, and a conductive adhesive member underlying the support layer and the TMVs;
• disposing a semiconductor die on a first redistribution structure;
• disposing one of the composite conductive structures on the first redistribution structure to form a lower tier of a stack of composite conductive structures;
• stacking another one of the composite conductive structures on the one of the composite conductive structures to form an upper tier of the stack of composite conductive structures;
• and
• forming an insulating encapsulation on the first redistribution structure to laterally cover the stack of composite conductive structures and the semiconductor die, wherein a thickness of the stack of composite conductive structures is substantially the same as a thickness of the insulating encapsulation.