US 12,765,388 B2 · Stacked transistor physically unclonable function

Abstract

An IC device includes a first and second stacked transistor structures including respective first and second and third and fourth transistors in a semiconductor substrate, first and second bit lines and a word line on one of a front or back side of the semiconductor substrate, and a power supply line on the other of the front or back side. The first transistor includes a source/drain (S/D) terminal electrically connected to the first bit line, a S/D terminal electrically connected to a S/D terminal of the second transistor, and a gate electrically connected to the word line, the third transistor includes a S/D terminal electrically connected to the second bit line, a S/D terminal electrically connected to a S/D terminal of the fourth transistor, and a gate electrically connected to the word line, and the second and fourth transistors include S/D terminals electrically connected to the power supply line.

Claims20

Dependent claims

An integrated circuit (IC) device comprising:

a first stacked transistor structure comprising first and second transistors positioned in a semiconductor substrate;
a second stacked transistor structure comprising third and fourth transistors positioned in the semiconductor substrate;
first and second bit lines and a word line positioned on one of a front or back side of the semiconductor substrate;
and
a first power supply line positioned on the other of the front or back side of the semiconductor substrate,
wherein
the first transistor comprises a first source/drain (S/D) terminal electrically connected to the first bit line, a second S/D terminal electrically connected to a first S/D terminal of the second transistor, and a gate electrically connected to the word line,
the third transistor comprises a first S/D terminal electrically connected to the second bit line, a second S/D terminal electrically connected to a first S/D terminal of the fourth transistor, and a gate electrically connected to the word line, and
each of the second and fourth transistors comprises a second S/D terminal electrically connected to the first power supply line.

6 more elements

A physically unclonable function (PUF) circuit, comprising:

a sense amplifier;
first and second bit lines coupled to input terminals of the sense amplifier;
a plurality of word lines;
a power distribution node;
and
a column of PUF device pairs, wherein each PUF device pair comprises:
a first stacked transistor structure comprising first and second transistors coupled in series between the first bit line and the power distribution node;
a second stacked transistor structure comprising third and fourth transistors coupled in series between the second bit line and the power distribution node;
and
gates of the first and third transistors coupled to a corresponding word line of the plurality of word lines.

7 more elements

An integrated circuit (IC) device comprising:

a semiconductor substrate;
a first stacked transistor structure
positioned in the semiconductor substrate, and
comprising first and second transistors coupled in series between a first bit line and a first node, arranged on a first side of the semiconductor substrate, and a power supply line arranged on a second side opposite the first side of the semiconductor substrate;
and
a second stacked transistor structure
positioned in the semiconductor substrate, and
comprising third and fourth transistors coupled in series between a second bit line and a second node, arranged on the first side of the semiconductor substrate, and the power supply line arranged on the second side of the semiconductor substrate, wherein the first node and the second node are electrically coupled to the power supply line.

5 more elements

Dependencies are inferred from the claim text.

Stacked transistor physically unclonable function

Life of this patent

Stacked transistor physically unclonable function

Life of this patent

Abstract

Claims20