Memory cell, three-dimensional memory, and method of operating three-dimensional memory

A memory cell, comprising:

• an array of channel layers comprising N channel layers, wherein the N channel layers are vertically provided on a substrate in a first direction, a tunneling layer and a memory layer are sequentially provided on an outer side of the N channel layers, and N is a positive integer;
• N thermal conductive cores located in the N channel layers respectively and penetrating the substrate;
• and
• an array of thermocouples comprising a thermocouple word line layer grown on the substrate in a negative direction of the first direction and N thermocouple layers located on the thermocouple word line layer, wherein the N thermocouple layers are connected one-to-one with the N thermal conductive cores,
• wherein a first potential difference is applied between the thermocouple word line layer and at least one of the N thermocouple layers, and the thermal conductive core connected with the at least one of the N thermocouple layers is heated, so that the channel layer corresponding to the thermal conductive core is maintained at a first preset temperature and the memory layer corresponding to the thermal conductive core is maintained at a second preset temperature under a thermal insulation effect of the tunneling layer.