US 12,765,375 B2Granted

Semiconductor package and method

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorMing-Fa Chen

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Abstract

A semiconductor package including a thermally conductive bridge and a method of forming are provided. The semiconductor package may include a first semiconductor device having a first substrate and first contact pads on the first substrate, a first thermally conductive feature on the first substrate and extending into the first substrate, a second semiconductor device over the first substrate, wherein the second semiconductor device may include second contact pads electrically connected to the first contact pads, a first thermally conductive bridge over the first semiconductor device and beside the second semiconductor device, and a first encapsulant over the first semiconductor device and along sidewalls of the second semiconductor device and the first thermally conductive bridge. The first thermally conductive bridge may include a second substrate and a second thermally conductive feature on the second substrate and extending into the second substrate, wherein the second thermally conductive feature may be bonded to the first thermally conductive feature.

Claims20

Dependent claims

A semiconductor package comprising:

a first semiconductor device comprising a first substrate and an interconnect structure on a first side of the first substrate;
a first dielectric layer on a second side of the first substrate opposing the first side of the first substrate;
first contact pads embedded in the first dielectric layer;
a first thermally conductive feature comprising a first portion embedded in the first dielectric layer and comprising a second portion embedded in the first substrate, wherein the first thermally conductive feature is electrically isolated, wherein the second portion of the first thermally conductive feature extends into, but not through, the first substrate, wherein the first thermally conductive feature is disposed over a first region of the first semiconductor device in a top view;
a second semiconductor device over the first substrate and the first dielectric layer, wherein the second semiconductor device comprises second contact pads, wherein the second contact pads are electrically connected to corresponding ones of the first contact pads, wherein the second semiconductor device is disposed over a second region of the first semiconductor device in the top view, wherein the first region surrounds the second region in the top view;
a first thermally conductive bridge over the first region of the first semiconductor device and beside the second semiconductor device, the first thermally conductive bridge comprising:
a second substrate, wherein the second substrate comprises a thermally conductive semiconductor material that extends continuously from a first side of the second substrate facing the first semiconductor device to a second side of the second substrate opposing the first side of the second substrate;
a second dielectric layer on the first side of the second substrate;
and
a second thermally conductive feature comprising a first portion embedded in the second dielectric layer and comprising a second portion embedded in the second substrate, wherein the second thermally conductive feature is electrically isolated, wherein the second portion of the second thermally conductive feature extends into, but not through, the second substrate, wherein the first portion of the second thermally conductive feature is bonded to the first portion of the first thermally conductive feature, wherein the second dielectric layer is bonded to the first dielectric layer;
and
a first encapsulant over the first dielectric layer and along sidewalls of the second semiconductor device and the first thermally conductive bridge, wherein the second semiconductor device and the first thermally conductive bridge are separated by the first encapsulant, wherein the second side of the second substrate is level with an upper surface of the first encapsulant distal from the first substrate and an upper surface of the second semiconductor device distal from the first substrate.

9 more elements

A semiconductor package comprising:

a first semiconductor device comprising a first substrate;
a first encapsulant along sidewalls of the first semiconductor device;
a first dielectric layer on the first encapsulant and the first substrate;
a first heat transfer feature extending into the first dielectric layer and the first substrate, wherein the first heat transfer feature is electrically isolated;
a second semiconductor device comprising a second substrate, wherein the second semiconductor device is bonded to the first dielectric layer;
a first heat transfer bridge disposed beside the second semiconductor device, the first heat transfer bridge comprising:
a third substrate having a single-layer structure;
a second dielectric layer on a first side of the third substrate facing the first substrate, wherein a second side of the third substrate is opposite to the first side of the third substrate, wherein the second dielectric layer is in contact with the first dielectric layer;
and
a second heat transfer feature extending into the second dielectric layer and the third substrate, wherein the second heat transfer feature is electrically isolated, wherein the second heat transfer feature is covered by extends into, but not through, the third substrate, and wherein the second heat transfer feature is bonded to the first heat transfer feature;
and
a second encapsulant on the first dielectric layer and along sidewalls of the second semiconductor device and along sidewalls of the first heat transfer bridge, wherein an upper surface of the second encapsulant distal from the first substrate is level with the second side of the third substrate and level with a surface of the second semiconductor device distal from the first substrate.

9 more elements

A semiconductor package comprising:

a first semiconductor die comprising a first substrate;
a first encapsulant on sidewalls of the first semiconductor die;
a first dielectric layer on the first encapsulant and the first substrate;
a first heat transfer feature extending into the first dielectric layer and the first substrate, wherein the first heat transfer feature is electrically isolated;
a first heat transfer bridge on the first dielectric layer, the first heat transfer bridge comprising:
a second substrate;
a second dielectric layer on a first side of the second substrate facing the first substrate, wherein the second dielectric layer is bonded to the first dielectric layer;
and
a second heat transfer feature extending into the second dielectric layer and the second substrate, wherein the second heat transfer feature is electrically isolated, wherein the second heat transfer feature is bonded to the first heat transfer feature;
a second encapsulant on sidewalls of the first heat transfer bridge, wherein an upper surface of the second encapsulant distal from the first substrate is level with a second side of the second substrate, wherein the second side of the second substrate is opposite to the first side of the second substrate;
a third dielectric layer on the second encapsulant and the second side of the second substrate;
and
a third heat transfer feature extending into the third dielectric layer and the second substrate, wherein the third heat transfer feature is electrically isolated, wherein the second heat transfer feature and the third heat transfer feature are separated by the second substrate.

10 more elements

Dependencies are inferred from the claim text.