Power microelectronic device
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorRene Escoffier
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Abstract
A power device includes high electron mobility transistors formed on an active layer, each transistor comprising a source finger, a drain finger and a gate finger, a source contact common to the source fingers, a drain contact common to the drain fingers, and a gate contact common to the gate fingers. At least one gate finger is not connected to the gate contact and forms a Schottky contact with the active layer. This gate finger forms, with the neighbouring drain finger, a Schottky diode configured to measure an operating temperature within the power device.
Claims10
A power microelectronic device comprising:
- a plurality of high electron mobility transistors formed on an active layer and connected in parallel,
- the plurality of high electron mobility transistors including
- a first transistor comprising a first source finger, a first drain finger and a first gate finger interposed between the first source finger and the first drain finger, and
- a second transistor comprising a second source finger, a second drain finger and a second gate finger interposed between the second source finger and the second drain finger,
- a source contact common to the first source finger and the second source finger,
- a drain contact common to the first drain finger and the second drain finger, and
- a gate contact common to the first gate finger and the second gate finger, and
- a third gate finger disposed between the first and second transistors, being not connected to the gate contact and forming a Schottky contact with the active layer,
- wherein the third gate finger forms, with a neighboring drain finger from among the first drain finger and second drain finger, at least one Schottky-type diode configured to measure an operating temperature within the power microelectronic device.
Dependencies are inferred from the claim text.