Tier recess method

A method for making of forming a vertical contact extending through levels of a memory device, the method comprising:

• forming an opening extending through a stack on a support, wherein the stack comprises a plurality of alternating layers of dielectric materials and nitride materials, and wherein the opening comprises a first portion proximal to the support and a second portion distal to the support;
• forming a first liner in the opening, wherein the first liner overlies the first portion and the second portion of the opening;
• forming a second liner over the first liner;
• selectively removing the first liner from under the second liner to expose the first portion of the opening, such that the first liner remains intact over the second portion of the opening, and the second liner remains intact;
• selectively removing the second liner, leaving the first liner overlying the second portion of the opening;
• removing a first portion of each of the layers of the nitride materials in the first portion of the opening uncovered by the first liner;
• removing the second portion of the first liner;
• and
• removing a second portion of each of the layers of the nitride materials in the second portion of the opening, wherein the second portion is less than the first portion.