Integrated circuit device and method of manufacturing the same

A method of manufacturing an integrated circuit device, the method comprising:

• forming a target layer on a substrate;
• forming a reference layer on the target layer;
• forming a first reference pattern by patterning the reference layer, the first reference pattern extending long in a first lateral direction, the first reference pattern defining a mandrel hole having a first end portion with an end at a first point on a straight line that follows the first lateral direction;
• forming a reference spacer inside the mandrel hole, the reference spacer having an inner sidewall in contact with a sidewall of the first reference pattern;
• selecting one moving point from a first moving point and a second moving point, wherein the first moving point is forward in the first lateral direction from a reference line extending in a second lateral direction through the first point, and the second moving point passes through the reference line, wherein the second lateral direction is perpendicular to the first lateral direction;
• forming a second reference pattern by patterning the first reference pattern, the second reference pattern extending parallel to the mandrel hole in the first lateral direction, the second reference pattern having a second end portion extending to the selected moving point, the second reference pattern defining a shift hole exposing the inner sidewall of the reference spacer;
• forming a target pattern having a plurality of target openings by etching the target layer using the reference spacer and the second reference pattern as an etch mask;
• and
• forming a plurality of conductive lines to fill the plurality of target openings, the plurality of conductive lines extending parallel to each other in the first lateral direction,
• wherein the plurality of conductive lines comprise,
• a first conductive line having one end portion and the other end portion, which are opposite to each other in the first lateral direction, and
• a second conductive line comprising a linear line portion and a first bulging end portion, the linear line portion extending in a straight line in the first lateral direction, the first bulging end portion extending from the linear line portion in the first lateral direction and protruding toward the one end portion of the first conductive line in the second lateral direction, the first bulging end portion protruding further than the one end portion of the first conductive line in the first lateral direction.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a target layer on a substrate;
• forming a reference layer on the target layer;
• forming, on the reference layer, a first photoresist pattern having a first opening;
• forming a first reference pattern defining a mandrel hole corresponding to the first opening by etching the reference layer using the first photoresist pattern as an etch mask;
• forming a reference spacer inside the mandrel hole, the reference spacer having an inner sidewall in contact with a sidewall of the first reference pattern;
• forming a second photoresist pattern on the first reference pattern and the reference spacer, the second photoresist pattern having a second opening vertically overlapping a portion of each of the first reference pattern and the reference spacer;
• forming a second reference pattern from the first reference pattern by etching a portion of the first reference pattern using the second photoresist pattern as an etch mask, the second reference pattern defining a shift hole exposing the inner sidewall of the reference spacer;
• forming a target pattern defining a plurality of target openings by etching the target layer using the reference spacer and the second reference pattern as an etch mask;
• and
• forming a plurality of conductive lines inside the plurality of target openings,
• wherein the plurality of conductive lines include,
• a first conductive line extending long in a first lateral direction, and
• a second conductive line extending parallel to the first conductive line in the first lateral direction, the second conductive line facing the first conductive line with an insulation distance between the first conductive line and the second conductive line, the insulation distance in a second lateral direction that is perpendicular to the first lateral direction,
• wherein the second conductive line comprises a linear line portion and a bulging end portion, wherein the linear line portion extends in a straight line in the first lateral direction, and the bulging end portion has a sidewall that extends in a curve and protrudes from the linear line portion toward one end portion of the first conductive line in the second lateral direction.