# US 12,765,357 B2 · Semiconductor device backside power distribution network structure and method of making > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,357 B2 - Document ID: US12765357B2 - Status: Granted - Kind: B2 - Application number: 18/496,490 - Filed: 2023-10-27 - Published: 2025-05-01 - Granted: 2026-10-13 - Earliest claimed: 2023-10-27 - Assignees: Avago Technologies International Sales Pte. Limited - Applicants: Avago Technologies International Sales Pte. Limited - Inventors: Sam Zhao; Xiaoming Li; Qing Liu - Web page: https://patentgrep.com/patent/US12765357B2 ## CPC - H10W 20/427: {Power or ground buses} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 70/698: Semiconductor materials that are electrically insulating, e.g. undoped silicon - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Novel tools and techniques are provided for implementing a semiconductor package or a chip package, and more particularly methods, systems, and apparatuses are provided for implementing a semiconductor package or a chip package including a backside power distribution network. In various embodiments, an apparatus includes a first substrate comprising a device configured to receive a voltage and a first side located on a front side of the first substrate and a second side located on a back side of the first substrate, a second substrate, the second substrate configured to support the first substrate, and a power distribution network located at an interface between the second side of the first substrate and the second substrate. ## Claims ### Claim 1 An apparatus comprising: a first substrate comprising a first device configured to receive a voltage, a first side disposed on a front of the first substrate, and a second side disposed on a back of the first substrate, wherein the first substrate further comprises a circuit towards the second side of the first substrate, wherein the circuit is configured to control a current; a second substrate, the second substrate configured to support the first substrate; and a power distribution network disposed at an interface between the second side of the first substrate and the second substrate. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the first substrate comprises monocrystalline silicon and the second substrate comprises monocrystalline silicon, polycrystalline silicon, silicon carbide, glass, sapphire, or gallium arsenide. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein the first device configured to receive the voltage comprises a transistor. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein the power distribution network directly couples to the second side of the first substrate and the second substrate. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein a ratio of a first thickness of the first substrate to a second thickness of the second substrate is between about 1:200 and 1:10. ### Claim 6 (depends on 1) The apparatus of claim 1, wherein the second substrate further comprises a second device configured to provide non-volatile memory. ### Claim 7 (depends on 1) The apparatus of claim 1, further comprising: a third substrate between the power distribution network and the first substrate; and the third substrate couples the power distribution network to the first substrate. ### Claim 8 (depends on 7) The apparatus of claim 7, wherein the third substrate further comprises: a first connector coupled to a power source and to the power distribution network; and a second connector coupled to the power distribution network and the first device of the first substrate. ### Claim 9 (depends on 1) The apparatus of claim 1, wherein the first substrate further comprises: a first connector coupled to a power source and to the power distribution network; and a second connector coupled to the power distribution network and the first device of the first substrate. ### Claim 10 (depends on 9) The apparatus of claim 9, wherein a ratio of a first diameter of the first connector to a second diameter of the second connector is between about 3:1 and 20:1. ### Claim 11 (depends on 9) The apparatus of claim 9, wherein at least one of the first connector or the second connector comprises a via or a trench. ### Claim 12 A method of manufacturing a backside power distribution network of a semiconductor device, the method comprising: forming at least one of a first substrate or a second substrate, wherein the first substrate comprises a device configured to receive a voltage and a circuit towards a back side of the first substrate, wherein the circuit is configured to control a current, and wherein the second substrate is configured to support the first substrate; and forming a power distribution network configured to be disposed at an interface between the back side of the first substrate and the second substrate. ### Claim 13 (depends on 12) The method of claim 12, wherein forming the power distribution network disposed at the interface between the first substrate and the second substrate comprises forming the power distribution network on the back side of the first substrate. ### Claim 14 (depends on 13) The method of claim 13, wherein, once the power distribution network is formed on the first substrate, the method further comprises bonding the first substrate to the second substrate. ### Claim 15 (depends on 12) The method of claim 12, wherein forming the power distribution network disposed at the interface between the first substrate and the second substrate comprises forming the power distribution network on the second substrate. ### Claim 16 (depends on 15) The method of claim 15, wherein, once the power distribution network is formed on the second substrate, the method further comprises bonding the first substrate to the second substrate. ### Claim 17 (depends on 12) The method of claim 12, wherein forming the power distribution network disposed at the interface between the first substrate and the second substrate comprises forming a third substrate and forming the power distribution network on the third substrate, wherein the third substrate further comprises a connector configured to couple the device of the first substrate with the power distribution network. ### Claim 18 (depends on 17) The method of claim 17, wherein, once the power distribution network is formed on the third substrate, the method further comprises bonding the first substrate to the third substrate and the second substrate to the third substrate, wherein the power distribution network is between the second substrate and the third substrate. ### Claim 19 A semiconductor device comprising: a first substrate comprising a device configured to receive a voltage; a metal layer coupled to a first side of the first substrate; a second substrate coupled to a second side of the first substrate opposite the metal layer and the first side, the second substrate configured to support the first substrate; and a power distribution network disposed between the second side of the first substrate and the second substrate, wherein the first substrate further comprises a circuit towards the second side of the first substrate, wherein the circuit is configured to control a current.