Three dimensional (3D) memory device and fabrication method
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLinchun Wu, Wenxi Zhou, Cuicui Kong, Zhiliang Xia, Zongliang Huo
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Abstract
A 3D memory device includes a conductor/insulator stack, a channel hole structure extending through the conductor/insulator stack, and a staircase contact (SCT). The conductor/insulator stack includes a first conductive layer and a first dielectric layer alternatingly stacked. The SCT includes a conductive structure, extends through the first dielectric layer, contacts a second dielectric layer, and is electrically connected to the first conductive layer. The second dielectric layer is parallel to the first conductive layer.
Claims20
A three-dimensional (3D) memory device, comprising:
- a conductor/insulator stack including a plurality of first conductive layers and a plurality of first dielectric layers alternatingly stacked;
- a channel hole structure extending through the conductor/insulator stack;
- a dielectric stack including the plurality of first dielectric layers and a plurality of second dielectric layers alternatingly stacked, wherein along a lateral direction, a second dielectric layer of the plurality of second dielectric layers extends along a first conductive layer of the plurality of the first conductive layers;
- a plurality of second conductive layers, wherein a second conductive layer of the plurality of second conductive layers is formed through the second dielectric layer in the dielectric stack;
- and
- a plurality of staircase contacts (SCTs), wherein an SCT of the plurality of SCTs includes a conductive structure extending through the second conductive layer in the dielectric stack and electrically connected to the first conductive layer.
A system, comprising:
- a memory device;
- and
- a memory controller for controlling the memory device, the memory device comprising:
- a conductor/insulator stack including a plurality of first conductive layers and a plurality of first dielectric layers alternatingly stacked;
- a channel hole structure extending through the conductor/insulator stack;
- a dielectric stack including the plurality of first dielectric layers and a plurality of second dielectric layers alternatingly stacked, wherein along a lateral direction, a second dielectric layer of the plurality of second dielectric layers extends along a first conductive layer of the plurality of the first conductive layers;
- a plurality of second conductive layers, wherein a second conductive layer of the plurality of second conductive layers is formed through the second dielectric layer in the dielectric stack;
- and
- a plurality of staircase contacts (SCTs), wherein an SCT of the plurality of SCTs includes a conductive structure extending through the second conductive layer in the dielectric stack and electrically connected to the first conductive layer.
Dependencies are inferred from the claim text.