Semiconductor device with partition portions and gaps alternately formed between wirings in a wiring extending direction

A semiconductor device, comprising:

• a semiconductor substrate;
• a wiring layer including an electrode pad, the wiring layer formed on a first surface of the semiconductor substrate;
• a redistribution layer including wiring electrically connected to the electrode pad via a via, the redistribution layer formed on a second surface side opposite to the first surface of the semiconductor substrate;
• a protective film formed on a surface on a side opposite to the semiconductor substrate in the redistribution layer;
• and
• a partition formed by an insulating material, the partition arranged between pieces of wiring in the redistribution layer,
• wherein the partition and a void are alternately formed between the pieces of wiring in a direction in which the wiring extends, and
• wherein the partition has a cylindrical shape an axial direction of which coincides with a stacking direction of the redistribution layer with respect to the semiconductor substrate.

A semiconductor device, comprising:

• a semiconductor substrate;
• a wiring layer including an electrode pad, the wiring layer formed on a first surface of the semiconductor substrate;
• a redistribution layer including wiring electrically connected to the electrode pad via a via, the redistribution layer formed on a second surface side opposite to the first surface of the semiconductor substrate;
• a protective film formed on a surface on a side opposite to the semiconductor substrate in the redistribution layer;
• and
• a partition formed by an insulating material, the partition arranged between pieces of wiring in the redistribution layer,
• wherein the partition and a void are alternately formed between the pieces of wiring in a direction in which the wiring extends,
• wherein an insulating resin film is formed between the semiconductor substrate and the redistribution layer, and
• wherein the void is formed as a space reaching an inside of the insulating resin film.