Passive component Q factor enhancement with elevated resistance region of substrate
AssigneeTexas Instruments Incorporated
InventorsSwaminathan Sankaran, Scott Robert Summerfelt, Benjamin Cook
Life of this patent
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Abstract
An integrated circuit (IC) includes a semiconductor substrate and an interconnect region. The semiconductor substrate has a first surface and a second surface opposite the first surface. The semiconductor substrate has a first region with a passive component. The semiconductor substrate has a second region outside the first region. The resistance of the second region is smaller than the resistance of the first region. The interconnection region is on the second surface of the semiconductor substrate.
Claims31
An integrated circuit (IC), comprising:
- a semiconductor substrate having opposite first and second sides, the first side of the semiconductor substrate including a recess and a dielectric material in the recess;
- an interconnect region on the second side of the semiconductor substrate, the interconnect region including one or more levels of metal lines;
- and
- a passive device on the second side of the semiconductor substrate, the passive device overlapping at least part of the recess.
An integrated circuit (IC), comprising:
- a semiconductor substrate having a first surface, and a second surface opposing the first surface;
- a trench extending from the first surface towards the second surface of the semiconductor substrate;
- a dielectric material in the trench;
- and
- a passive device over the second surface and opposing the first surface, the passive device overlapping with at least part of the trench.
A method comprising:
- forming a trench from a first surface of a semiconductor substrate, in which the semiconductor substrate has a second surface opposing the first surface;
- depositing a dielectric material in the trench;
- and
- forming a passive device over the second surface or in the semiconductor substrate, in which the passive device opposes and overlaps at least partially with the trench.
Dependencies are inferred from the claim text.