# US 12,765,327 B2 · Method for manufacturing semiconductor device and method for manufacturing power control circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,327 B2 - Document ID: US12765327B2 - Status: Granted - Kind: B2 - Application number: 17/198,623 - Filed: 2021-03-11 - Published: 2021-11-25 - Granted: 2026-10-13 - Earliest claimed: 2020-05-19 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Yosuke Nakata - Web page: https://patentgrep.com/patent/US12765327B2 ## CPC - H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics} - H10W 74/01: Manufacture or treatment - H10W 90/00: Package configurations - H10W 72/07331: {Connecting techniques} - H10W 72/07531: {Techniques} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract In a method for manufacturing a semiconductor device, a back surface of each of plurality of current-carrying semiconductor elements each having a plurality of P-N junction diodes built-in is connected to a first principal surface of a conductor plate. Further, a conductor piece is connected to a front surface of each of the plurality of current-carrying semiconductor elements. Then, a current-carrying test is conducted on the plurality of P-N junction diodes with a second principal surface of the conductor plate exposed on a bottom surface of an intermediate product of a semiconductor device including the plurality of current-carrying semiconductor elements, the conductor plate, and the conductor piece. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, the method comprising: a) connecting a back surface of each of a plurality of current-carrying semiconductor elements having each of a plurality of P-N junction diodes built-in to a first principal surface of a conductor plate; b) connecting a conductor piece on a front surface of each of the plurality of current-carrying semiconductor elements; and c) conducting, after step a) and step b) are performed, a current-carrying test of the plurality of P-N junction diodes by applying a common potential to each of the plurality of current-carrying semiconductor elements via a second principal surface of the conductor plate with the second principal surface of the conductor plate exposed on a bottom surface of an intermediate product of a semiconductor device including the plurality of current-carrying semiconductor elements, the conductor plate, and the conductor piece, wherein during step c), the second principal surface of the conductor plate is electrically connected to the plurality of current-carrying semiconductor elements. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, the method further comprising: d) forming each of two or more gate electrodes on a front surface of each of two or more current-carrying semiconductor elements included in the plurality of current-carrying semiconductor elements; e) connecting a relay board including a gate circuit pattern having conductivity to the first principal surface; and f) electrically connecting the two or more gate electrodes to each other via the gate circuit pattern, wherein step c) is performed after step d), step e), step f) are performed. ### Claim 3 (depends on 2) The method for manufacturing a semiconductor device according to claim 2, wherein, in step e), the relay board is connected to the first principal surface by sinter bonding. ### Claim 4 A method for manufacturing a semiconductor device, the method comprising: a) connecting a back surface of each of a plurality of current-carrying semiconductor elements having each of a plurality of P-N junction diodes built-in to a first principal surface of a conductor plate; b) connecting a conductor piece on a front surface of each of the plurality of current-carrying semiconductor elements; c) conducting, after step a) and step b) are performed, a current-carrying test of the plurality of P-N junction diodes with a second principal surface of the conductor plate exposed on a bottom surface of an intermediate product of a semiconductor device including the plurality of current-carrying semiconductor elements, the conductor plate, and the conductor piece; d) forming each of two or more gate electrodes on a front surface of each of two or more current-carrying semiconductor elements included in the plurality of current-carrying semiconductor elements; e) connecting a relay board including a gate circuit pattern having conductivity to the first principal surface; f) electrically connecting the two or more gate electrodes to each other via the gate circuit pattern; and g) electrically reconnecting the two or more gate electrodes to each other via the gate circuit pattern after step c) is performed, wherein step c) is performed after step d), step e), step f) are performed. ### Claim 5 A method for manufacturing a semiconductor device, the method comprising: a) connecting a back surface of each of a plurality of current-carrying semiconductor elements having each of a plurality of P-N junction diodes built-in to a first principal surface of a conductor plate; b) connecting a conductor piece on a front surface of each of the plurality of current-carrying semiconductor elements; c) conducting, after step a) and step b) are performed, a current-carrying test of the plurality of P-N junction diodes by applying a common potential to each of the plurality of current-carrying semiconductor elements via a second principal surface of the conductor plate with the second principal surface of the conductor plate exposed on a bottom surface of an intermediate product of a semiconductor device including the plurality of current-carrying semiconductor elements, the conductor plate, and the conductor piece; h) forming each of two or more source electrodes on a front surface of each of two or more current-carrying semiconductor elements included in the plurality of current-carrying semiconductor elements; i) connecting a relay board including a source circuit pattern having conductivity to the first principal surface; and j) electrically connecting the two or more source electrodes to each other via the source circuit pattern, wherein step j) is performed after step c) is performed, and during step c), the second principal surface of the conductor plate is electrically connected to the plurality of current-carrying semiconductor elements. ### Claim 6 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, wherein, in step i), the relay board is connected to the first principal surface by sinter bonding. ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, the method further comprising: k) forming each of two or more source electrodes on a front surface of each of two or more current-carrying semiconductor elements included in the plurality of current-carrying semiconductor elements; l) connecting a relay board including a source circuit pattern including two or more patterns electrically independent of each other and having conductivity to the first principal surface; and m) electrically connecting each of the two or more source electrodes to each of the two or more patterns, wherein step m) is performed before step c) is performed. ### Claim 8 (depends on 7) The method for manufacturing a semiconductor device according to claim 7, the method further comprising: n) connecting a spacer conductor electrically connecting the two or more patterns to each other to the source circuit pattern, wherein step n) is performed after step c) is performed. ### Claim 9 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein in step a), a back surface of each of the plurality of current-carrying semiconductor elements is connected to the first principal surface by sinter bonding, and in step b), the conductor piece is connected to a front surface of each of the plurality of current-carrying semiconductor elements by sinter bonding. ### Claim 10 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the conductor piece is a plurality of conductor pieces independent of each other and connected to a front surface of each of the plurality of current-carrying semiconductor elements, the method further comprises: o) forming each of two or more source electrodes on a front surface of each of two or more current-carrying semiconductor elements included in the plurality of current-carrying semiconductor elements, wherein, in step b), each of two or more conductor pieces included in the plurality of conductor pieces is connected to a front surface of each of the two or more current-carrying semiconductor elements via each of the two or more source electrodes. ### Claim 11 A method for manufacturing a semiconductor device, the method comprising: a) connecting a back surface of each of a plurality of current-carrying semiconductor elements having each of a plurality of P-N junction diodes built-in to a first principal surface of a conductor plate; b) connecting a conductor piece on a front surface of each of the plurality of current-carrying semiconductor elements; c) conducting, after step a) and step b) are performed, a current-carrying test of the plurality of P-N junction diodes by applying a common potential to each of the plurality of current-carrying semiconductor elements via a second principal surface of the conductor plate with the second principal surface of the conductor plate exposed on a bottom surface of an intermediate product of a semiconductor device including the plurality of current-carrying semiconductor elements, the conductor plate, and the conductor piece; p) connecting a relay board including a gate circuit pattern having conductivity and a source circuit pattern having conductivity to the first principal surface; q) connecting a plurality of spacer conductors to the gate circuit pattern and the source circuit pattern; and r) forming, after step c) is performed, resin sealing material covering the plurality of current-carrying semiconductor elements, the relay board, at least a portion of the conductor plate, at least a portion of the conductor piece, and at least a portion of the plurality of spacer conductors, wherein during step c), the second principal surface of the conductor plate is electrically connected to the plurality of current-carrying semiconductor elements. ### Claim 12 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, the method further comprising: s) grinding at least a portion of the conductor piece, at least a portion of the plurality of spacer conductors, and at least a portion of the resin sealing material, and exposing a surface of the conductor piece and a surface of the spacer conductor on a ground surface of the resin sealing material. ### Claim 13 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, the method further comprising: t) mounting a temperature sensing element on a current-carrying semiconductor element included in the plurality of current-carrying semiconductor elements. ### Claim 14 (depends on 1) A method for manufacturing a power control circuit comprising: manufacturing a plurality of semiconductor devices by the method for manufacturing a semiconductor device according to claim 1; and manufacturing a power control circuit including the plurality of semiconductor devices. ### Claim 15 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the conductor piece is included among a plurality of conductor pieces connected on the front surface of each of the plurality of current-carrying semiconductor elements, and at least two conductor pieces among the plurality of conductor pieces have different potentials from each other during the current-carrying test. ### Claim 16 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, the method further comprising: u) forming, after step c) is performed, resin sealing material covering the plurality of current-carrying semiconductor elements, at least a portion of the conductor plate, and at least a portion of the conductor piece; and v) grinding at least a portion of the conductor piece and at least a portion of the resin sealing material.