Mitigation of saddle deformation of substrates using film deposition and edge ion implantation

A system comprising:

• a memory;
• and
• a processing device communicatively coupled to the memory, the processing device to:
• obtain, using optical inspection data, a profile of an out-of-plane deformation of a substrate;
• identify, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate;
• compute, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate;
• cause the SCL to be deposited on the substrate;
• and
• cause a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters.

A semiconductor manufacturing system comprising:

• one or more processing chambers to process a substrate;
• and
• a computing device to:
• obtain, using optical inspection data, a profile of an out-of-plane deformation of the substrate;
• identify, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate;
• compute, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate;
• cause the SCL to be deposited on the substrate;
• and
• cause a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters.